Overlapping top gate electrodes based on low temperature atomic layer deposition for nanoscale ambipolar lateral junctions
Christopher Fuchs,
Lena Fürst,
Hartmut Buhmann
et al.
Abstract:We present overlapping top gate electrodes for the formation of gate defined lateral junctions in semiconducting layers as an alternative to the back gate/top gate combination and to the split gate configuration. The optical lithography microfabrication of the overlapping top gates is based on multiple layers of low-temperature atomic layer deposited hafnium oxide, which acts as a gate dielectric and as a robust insulating layer between two overlapping gate electrodes exhibiting a large dielectric breakdown fi… Show more
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