Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

Ritzmann, Julian; Schott, Rüdiger; Gross, K.; Reuter, D.; Ludwig, Arne; Wieck, A. D.

doi:10.1016/j.jcrysgro.2017.10.029

Cited by 6 publications

(6 citation statements)

References 9 publications

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“…Combining the local dependence of the island size and density with the finite temperature range where the bimodal distribution is observed, we can interpret the relationship between the local environment and the droplet size as stemming from the combined effect of the initial droplet nucleation site and the influence of the presence of ES barrier at the step edges on the adatom diffusion length 16 , 21 , 42 .…”

Section: Resultsmentioning

confidence: 85%

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Tuktamyshev

Fedorov

Bietti

et al. 2021

Sci Rep

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We investigated the nucleation of Ga droplets on singular GaAs(111)A substrates in the view of their use as the seeds for the self-assembled droplet epitaxial quantum dots. A small critical cluster size of 1–2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.35) demonstrate a high degree of a spatial order of the droplet ensemble. Around $$350\,^{\circ }\hbox {C}$$ 350 ∘ C the droplet size distribution becomes bimodal. We attribute this observation to the interplay between the local environment and the limitation to the adatom surface diffusion introduced by the Ehrlich–Schwöbel barrier at the terrace edges.

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Section: Resultsmentioning

confidence: 85%

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Tuktamyshev

Fedorov

Bietti

et al. 2021

Sci Rep

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“…The original surface morphology affects on the droplet size distribution and thus, in turn the island size. Combining this observation with the finite temperature range where the bimodal distribution is observed, we can interpret the relationship between the local environment and the droplet size as stemming from the combined effect of the initial droplet nucleation site and the influence of the presence of ES barrier at the step edges on the adatom diffusion length 17,20,39 .…”

Section: Figurementioning

confidence: 72%

“…We attributed such behavior to the influence of local surface morphology which is sampled by the island CZ during its growth. Wide terraces (tens of nm wide) are observed on the singular GaAs(111)A surface and related to the presence of large and flat hillocks generated by the stacking faults 17,38,39 . The bimodal size distribution is attributed to the presence of the strong ES barrier at the terrace step edges 17 , which limits Ga adatom diffusion on the terraces, thus inducing strong differences in the CZ size for droplets are nucleated on the terraces or at the terrace step edges.…”

Section: Discussionmentioning

confidence: 99%

Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

Tuktamyshev

Fedorov

Bietti

et al. 2021

Preprint

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We investigated the nucleation of Ga droplets on exact GaAs(111)A substrates in the view of their use as the seeds for the self-assembly droplet epitaxial quantum dots. A small critical cluster size of 1-2 atoms characterizes the droplet nucleation. Low values of the Hopkins-Skellam index (as low as 0.35) demonstrate a high degree of a spatial order of the droplet ensemble. Around 350 °C the droplet size distribution becomes bimodal. We attribute this observation to the interplay between the local environment and the limitation to the adatom surface diffusion introduced by the Ehrlich-Schwöbel barrier at the terrace edges.

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“…surfaces. A high Ehrlich-Schwoebel barrier [17] at step edges of 2D islands restricts the downward motion of adatoms and facilitates 3D growth by increasing their residence time on a 2D terrace and thus also the probability of forming new 2D layers on top of existing ones [18,19]. This effect, together with the diffusion anisotropy and the low energy of {110} type facets is responsible for the formation of the observed hillocks during MBE growth.…”

Section: Pattern Defectmentioning

confidence: 99%

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A

Kunnathully

Riedl

Trapp

et al. 2020

Journal of Crystal Growth

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Heteroepitaxy on nanopatterned substrates is a means of defect reduction at semiconductor heterointerfaces by exploiting substrate compliance and enhanced elastic lattice relaxation resulting from reduced dimensions. We explore this possibility in the InAs/GaAs(111)A system using a combination of nanosphere lithography and reactive ion etching of the GaAs(111)A substrate for nano-patterning of the substrate, yielding pillars with honeycomb and hexagonal arrangements and varied nearest neighbor distances. Substrate patterning is followed by MBE growth of InAs at temperatures of 150 -350 C and growth rates of 0.011 nm/s and 0.11 nm/s. InAs growth in the form of nano-islands on the pillar tops is achieved by lowering the adatom migration length by choosing a low growth temperature of 150 C at the growth rate 0.011 nm/s. The choice of a higher growth rate of 0.11 nm/s results in higher InAs island nucleation and the formation of hillocks concentrated at the pillar bases due to a further reduction of adatom migration length. A common feature of the growth morphology for all other explored conditions is the formation of merged hillocks or pyramids with well-defined facets due to the presence of a concave surface curvature at the pillar bases acting as adatom sinks.

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Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

Cited by 6 publications

References 9 publications

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A

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Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy

Cited by 6 publications

References 9 publications

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Nucleation of Ga droplets self-assembly on GaAs(111)A substrates

Nucleation of Ga Droplets Self-Assembly on GaAs(111)A Substrates

InAs heteroepitaxy on nanopillar-patterned GaAs (111)A

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Overcoming Ehrlich-Schwöbel barrier in (1 1 1)A GaAs molecular beam epitaxy