2007
DOI: 10.1246/cl.2008.46
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Overall Water Splitting by RuO2-loaded Hexagonal YInO3 with a Distorted Trigonal Bipyramid

Abstract: RuO2-loaded hexagonal YInO3 consisting of a distorted InO5 trigonal bipyramid was found to be photocatalytically active in the water-splitting reaction. The characteristic role of the InO5 structure in the photocatalytic performance is described.

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Cited by 7 publications
(4 citation statements)
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“…Precise control over the bandgaps and band-edge positions of semiconductors intended for single photoexcitation-based water splitting has been achieved using the solid-solution approach. Many materials have been studied in this regard, including Sr 2 Nb x Ta 2– x O 7 , Y x In 2– x O 3 , , Sc x In 2– x O 3 , BiYWO 6 , (Ga 1– x Zn x )­(N 1– x O x ), , ZnO/GaN-P, (Zn 1+ x Ge)­(N 2 O x ), , Li 1– x Cu x Nb 3 O 8 , BaZr 1– x Sn x O 3 , Bi x Y 1– x MO 4 (M = La, Eu, Sm, Y, Dy, Nd and Gd), ,,, and LaMg x Ta 1– x O 1+3 x N 2–3 x . In particular, our own group reported work with GaN:ZnO solid solutions in 2005, representing the first example of efficient and stable visible-light-driven overall water splitting among semiconductors having a bandgap smaller than 3 eV. ,,, The absorption of light by both GaN and ZnO is restricted to the UV region by their wide bandgaps (3.4 and 3.2 eV, respectively). However, a solid solution of GaN and ZnO has a bandgap smaller than those of either of the two, with an estimated value of approximately 2.6 eV.…”
Section: Photon Absorptionmentioning
confidence: 99%
“…Precise control over the bandgaps and band-edge positions of semiconductors intended for single photoexcitation-based water splitting has been achieved using the solid-solution approach. Many materials have been studied in this regard, including Sr 2 Nb x Ta 2– x O 7 , Y x In 2– x O 3 , , Sc x In 2– x O 3 , BiYWO 6 , (Ga 1– x Zn x )­(N 1– x O x ), , ZnO/GaN-P, (Zn 1+ x Ge)­(N 2 O x ), , Li 1– x Cu x Nb 3 O 8 , BaZr 1– x Sn x O 3 , Bi x Y 1– x MO 4 (M = La, Eu, Sm, Y, Dy, Nd and Gd), ,,, and LaMg x Ta 1– x O 1+3 x N 2–3 x . In particular, our own group reported work with GaN:ZnO solid solutions in 2005, representing the first example of efficient and stable visible-light-driven overall water splitting among semiconductors having a bandgap smaller than 3 eV. ,,, The absorption of light by both GaN and ZnO is restricted to the UV region by their wide bandgaps (3.4 and 3.2 eV, respectively). However, a solid solution of GaN and ZnO has a bandgap smaller than those of either of the two, with an estimated value of approximately 2.6 eV.…”
Section: Photon Absorptionmentioning
confidence: 99%
“…There is only a single report that shows the Raman spectrum of YInO 3 to the best of our knowledge. However, its crystal structure resembles YMnO 3 (both of these are LuMnO 3 -type), which is a well-studied multiferroic system crystallizing in the P 6 3 cm lattice.…”
Section: Raman Spectroscopymentioning
confidence: 99%
“…However, the optical absorption of this material is fairly weak in the visible region. 5,6 In this work, the addition of graphene can narrow the band gap of YInO 3 to visible wavelengths and prolong the separation and lifetime of electron-hole pairs by the chemical bonding between YInO 3 and graphene. Signicantly enhanced performance for hydrogen evolution was achieved when graphene was used as the cocatalyst.…”
Section: Introductionmentioning
confidence: 97%