“…Precise control over the bandgaps and band-edge positions of semiconductors intended for single photoexcitation-based water splitting has been achieved using the solid-solution approach. Many materials have been studied in this regard, including Sr 2 Nb x Ta 2– x O 7 , Y x In 2– x O 3 , , Sc x In 2– x O 3 , BiYWO 6 , (Ga 1– x Zn x )(N 1– x O x ), ,− ZnO/GaN-P, (Zn 1+ x Ge)(N 2 O x ), , Li 1– x Cu x Nb 3 O 8 , BaZr 1– x Sn x O 3 , Bi x Y 1– x MO 4 (M = La, Eu, Sm, Y, Dy, Nd and Gd), ,,, and LaMg x Ta 1– x O 1+3 x N 2–3 x . − In particular, our own group reported work with GaN:ZnO solid solutions in 2005, representing the first example of efficient and stable visible-light-driven overall water splitting among semiconductors having a bandgap smaller than 3 eV. ,,, The absorption of light by both GaN and ZnO is restricted to the UV region by their wide bandgaps (3.4 and 3.2 eV, respectively). However, a solid solution of GaN and ZnO has a bandgap smaller than those of either of the two, with an estimated value of approximately 2.6 eV.…”