Over-67-GHz-bandwidth Membrane InGaAlAs EADFB Laser on Si Platform

Hiraki, Tatsurou; Aihara, Takuma; Maeda, Yoshiho; Fujii, T.; Sato, Tomonari; Tsuchizawa, Tai; Takahata, Kenichi; Kakitsuka, Takaaki; Matsuo, Shinji

doi:10.1364/ofc.2022.m3d.2

Cited by 2 publications

(4 citation statements)

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“…17 Here, the modulation efficiency of the fabricated EADFB laser is still lower than that of the stand-alone EAM. The EADFB laser had a static modulation efficiency of about 2 dB/V, as estimated from the ERs at DC voltages from 0 to 5 V [15], while that of the stand-alone EAM was about 3 dB/V. The degradation is caused by the non-optimized doping profile, which arises from the alignment errors in the lithography processes during the fabrication of the EADFB laser.…”

Section: B Membrane Eadfb Lasermentioning

confidence: 99%

“…Fig. 16 shows the experimental setup [15]. NRZ signals from a pulse pattern generator (PPG) were amplified by an RF amplifier.…”

Section: B Membrane Eadfb Lasermentioning

confidence: 99%

“…The DC bias voltage applied to the EAM was 2 V, and the LD current was 44 mA. We achieved a relatively clear eye opening even with SOA noise and an extinction ratio of 3.8 dB thanks to the wide E-O bandwidth, good linearity[15], and high modulation efficiency. Fig.18(a) and (b) show the input and output waveforms for 112-Gbit/s NRZ signals.…”

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confidence: 95%

“…In addition, the optical coupling between the InGaAlAs MQW and Si waveguide enables a low-loss waveguide structure to be fabricated for the high-performance DFB laser on the same wafer. In our preliminary work, we demonstrated a membrane EADFB laser with an E-O bandwidth of more than 67 GHz and 100-Gbit/s non-return-to-zero (NRZ) operation [15]. In this article, we discuss the details of the membrane EAM and demonstrate the EADFB laser in 112-Gbit/s NRZ operation.…”

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confidence: 99%

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Over-67-GHz-Bandwidth Membrane InGaAlAs Electro-Absorption Modulator Integrated With DFB Laser on Si Platform

Hiraki

Aihara

Maeda

et al. 2023

J. Lightwave Technol.

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We fabricate a membrane InGaAlAs electroabsorption modulator (EAM) integrated with a distributed feedback (DFB) laser combining direct wafer bonding and epitaxial regrowth of InP-based layers on a silicon-on-insulator wafer. Heterogeneous integration of an InP-based multiple-quantum-well (MQW) layer into the Si photonics simplifies the integration of the O-band EAMs and laser diodes (LDs). EAMs and LDs can be fabricated using the same MQW layer because of the wide operating range and the direct bandgap of the MQWs. A compact and high-speed lumped-electrode EAM can be made because the membrane lateral p-i-n diode structure has low capacitance and a large optical confinement factor. The effective-refractive-index matching between the membrane InP and Si layers enables the DFB laser to be fabricated with a low-loss supermode waveguide whose MQW core was optically coupled to the Si core. The fabricated 100-µm-long membrane EAM has a high modulation efficiency of about 3 dB/V at 1260 nm and E-O bandwidth of over 67 GHz even without a 50-ohm termination. The EAM-integrated DFB laser has a fiber coupled output power of about −2 dBm and clear eye openings with an extinction ratio of 3.8 and 3.2 dB for 100-and 112-Gbit/s non-return-to-zero signals, respectively.

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Section: B Membrane Eadfb Lasermentioning

confidence: 99%

“…Fig. 16 shows the experimental setup [15]. NRZ signals from a pulse pattern generator (PPG) were amplified by an RF amplifier.…”

Section: B Membrane Eadfb Lasermentioning

confidence: 99%

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confidence: 95%

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confidence: 99%

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