Over 1000 V n-ch LDMOSFET and p-ch LIGBT with JI RESURF structure and multiple floating field plate

An 800 volts high voltage interconnection level shifter using Floating Poly Field Plate (FPFP) method

“…Techniques are available to field plate the high voltage junction to alleviate the problems caused by a high voltage interconnect crossing above the junction. Some of works have been reported, such as using Floating Metal Rings [1], scroll shaped resistivefield-plate [2], Multiple Floating Field Plate (MFFP) [3,4,5], Double Metal Field Plates [6], Edge Terminations [7], and Multiple Step Shaped Equipotential Rings [8]. Another work was focus on how to compromise the bottom structure of the device (using p-top structure) to optimize the device performance in order to sustain the device to 800V breakdown [9].…”

Realization of over 650V double RESURF LDMOS with HVI for high side gate drive IC

“…It causes severe local centralization because the high electric potential of interconnection affects the electric field distribution of Si surface. This brings much lower breakdown voltage of LDMOS and HVJT (high voltage junction terminal) than expected breakdown voltage [1].To avoid the breakdown voltage reduction, scroll shaped resistive-field-plate [2], double layers MFFP (multiple floating field plate) [3], Biased Polysilicon Field Plates [4] and modified-MFFP [5] have been proposed previously. However, these structures require thick insulator and additional conductive layer, which increase cost and process difficulty.…”

High voltage gate drive IC with a novel NFFP HVI structure

“…HVI, extended from the drain contact of lateral double-di ffusion MOSFET (LOMOS) for transferring low voltage logic signal to high side control part, causes severe local centralization of electric field lines because the high electric potential of interconnection affects the electric field distribution of silicon surface . This brings much lower breakdown voltage for high voltage LOMOS and HVJT than expected breakdown voltage[I], [2].To avoid the reduction of the breakdown voltage, scroll shaped resistive-field-plate [3], multiple floating field plate (MFFP) [4], biased polysilicon field plates [5] and modified-MFFP [6] have been proposed previously. However, these structures require additional conductive layer and added process steps which increase cost and process complexity.…”

“…An 850V half bridge gate drive IC with the proposed NFFP HVI structure is also exper imentally realized by using a thin epitaxial high voltage BIPOLAR-CMOS-OMOS (BCD) process [7]. Compared with the MFFP HVI structure [4], [6], the NFFP HVI structure shows simpler process and lower cost. The high side offset voltage of the half bridge gate drive IC with the NFFP HVI structure is almost equal to that with the self-shielding structure [8], [9].…”