Over 100 mW Uncooled Operation of SOA-integrated 1.3-µm Highly Reliable CW-DFB Laser

Yokokawa, Shoko; Nakamura, Atsushi; Hamada, S.; Nakajima, Ryosuke; Okamoto, K.; Arasawa, Masatoshi; Nakahara, K.; Tanaka, Shigehisa

doi:10.1364/ofc.2022.m4d.3

Cited by 7 publications

(8 citation statements)

References 1 publication

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“…The spectral redshift with increasing temperature is due to MQW active-layer bandgap narrowing being established as the dominant factor 31 . As temperature increases, the EL gain-peak redshifts at ∼1 nm/°C, which has been experimentally verified and by other references 27 , 30 . In Fig.…”

Section: Resultssupporting

confidence: 63%

“…The vertical-FFs of our DFB-SSC range from 14° to 19°. These are smaller than that of the industry standard, in which the vertical-FF is 20° to 30° 30 . The horizontal-FFs of our DFB-SSC range from 9° to 11°, which is also smaller than that of industry standard, in which the horizontal-FF is 10° to 20° 30 .…”

Section: Resultsmentioning

confidence: 63%

“…30 The horizontal-FFs of our DFB-SSC range from 9°to 11°, which is also smaller than that of industry standard, in which the horizontal-FF is 10°to 20°. 30 This is due to our utilization of a passive bulk-InGaAsP core layer judicially placed just beneath the MQW. Figures 9(a) and 9(b) show the simulated mode-profiles of output of SSC without and with passive bulk-InGaAsP core layer beneath the SSC core, respectively.…”

Section: Resultsmentioning

confidence: 78%

“…31 As temperature increases, the EL gain-peak redshifts at ∼1 nm∕°C, which has been experimentally verified and by other references. 27,30 In Fig. 7, there exists a temperature-rise margin of about 10°C to 12°C for the gain-peak to coincide with the DFB emission peak.…”

Section: Resultsmentioning

confidence: 99%

“…The measured coupling loss to on-chip SiPh edge-coupler was 1 to 1.3 dB 29 . Low coupling loss is due to the judicial placement of novel extra InGaAsP passive layer beneath the multiple-quantum-well (MQW) active layer in the SSC fabricated in the BH device-platform such that it exhibits far-fields lower than most CW-DFB devices in the industry 26 , 30 …”

Section: Introductionmentioning

confidence: 99%

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100-mW power efficient 1.3-μm SSC/SOA-integrated CW-DFB laser for Si-photonics in Co-Package Optics applications

et al. 2023

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We report the design, fabrication, and characterization of 1310-nm-emission buried-heterostructure (BH) spot-size-converter (SSC)-integrated distributed-feedback (DFB) laser diode (LD) with record power efficiency of 20% at optical power of more than 100 mW at 75°C and current of 400 mA. The SSC also functions as semiconductor optical amplifier so that with laser oscillation takes place in the DFB section, the SSC provides optical gain while shaping the optical mode to give a lowest possible far-field (FF) of 9°ðhÞ × 14.5°ðvÞ. The measured coupling loss of the SSC-integrated DFB LD output to 10 μm-radius-of-curvature lensed single-mode-fiber is ∼0.9 dB. For Co-Package Optics application, the SSC-integrated DFB LD is a potentially viable candidate for External-Laser-Source module, or for hybridintegrated laser-source on silicon photonics (SiPh) platform via flip-chip and butt-coupling of light to SiPh waveguide.

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