Outlook for 157-nm resist design

Kunz, Roderick R.; Bloomstein, Theodore M.; Hardy, D. E.; Goodman, Russell B.; Downs, D. K.; Curtin, Jane E.

doi:10.1117/12.350200

Cited by 57 publications

(20 citation statements)

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“…These data were measured with the VUV-Vase at Sematech. latter significantly increase the optical absorbance [2]. An example of absorbance spectra of TFE/NB/t-BA terpolymers with different amounts of t-BA (tert-butyl acrylate) is shown in Figure 6, and these data clearly show the strong increase of absorbance introduced by the carbonyl groups in the acrylate.…”

Section: Effect Of Carbonyl Groups On Optical Absorptionmentioning

confidence: 82%

“…3.1.1 TFE Copolymers 3.1.1.1 Effect of TFE Incorporation on Optical Absorption Incorporating TFE into the backbone of copolymers has a powerful effect on the 157 nm absorbance of resist resins [2,3]. In Figure 3 we show two spectra, one of a VA copolymer of functionalized norbornenes, and the other of the same functionalized norbornenes but with some TFE copolymerized in the backbone.…”

Section: Example 70 Nmmentioning

confidence: 99%

“…The 157 nm absorbance has decreased signs scantly as a result of the TFE incorporation. This result initially stimulated our interest in the use of TFE copolymers as resins for 157 nm photoresists [2,3].…”

Section: Example 70 Nmmentioning

confidence: 99%

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Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Crawford

Farnham

Feiring

et al. 2002

J. Photopol. Sci. Technol.

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Implementation of 157 nm lithography using single-layer photoresists will require the development of resists with sufficiently high transparency in the vacuum ultraviolet to permit high resolution imaging using films approximately 200 nm thick. One of the more promising approaches to this objective involves the use of fluoropolymers as the base resins in the photoresists, since fluorination decreases the optical absorbance at 157 nm. Here we describe the optical properties and imaging performance of two fluoropolymer systems. One system is based upon tetrafluoroethylene copolymers, the other upon vinyl addition copolymers. Both systems incorporate norbornene derivatives to provide aqueous base (developer) solubility and plasma etch resistance.

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Section: Effect Of Carbonyl Groups On Optical Absorptionmentioning

confidence: 82%

Section: Example 70 Nmmentioning

confidence: 99%

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Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Crawford

Farnham

Feiring

et al. 2002

J. Photopol. Sci. Technol.

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“…This important information serves as starting point for 157 nm photoresist design. 42 Etch resistance, of course, must be incorporated into any 157 nm photoresist design. As in 193 nm lithography, simple aromatic groups are too absorbing to provide etch resistance in a 157 nm resist.…”

Section: Photoresists For 157 Nm Photolitho-graphymentioning

confidence: 99%

Organic imaging materials: a view of the future

Stewart

Patterson

Somervell

et al. 2000

J. Phys. Org. Chem.

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“…2 The quest for a combination of transparency and the other properties required for resist applications has progressed rapidly from the absorbances near 7µI, which are typical of the poly(hydroxystyrene) based 248nm resists that were used to characterize the lenses of the first 157nm exposure tools to the region of 1-2µI for the best of the norbornane based addition polymers. Asahi Glass Company announced at a recent meeting the most transparent material we are aware that can be imaged.…”

Section: Introductionmentioning

confidence: 99%

The Design of Resist Materials for 157nm Lithography.

Willson

Trinque

Osborn

et al. 2002

J. Photopol. Sci. Technol.

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The synthesis and characterization of several new fluoropolymers designed for use in the formulation of photoresists for exposure at 157 run will be described. The design of these resist platforms is based on learning from previously reported fluorine-containing materialsl. We have continued to explore anionic polymerizations, free radical polymerizations, metal-catalyzed addition polymerizations and metal-catalyzed copolymerizations with carbon monoxide in these studies. A new, three component design for 157nm resists will alos be presented. The monomers were characterized by vacuum-UV (VUV) spectrometry and polymers characterized by variable angle spectroscopic ellipsometry (VASE). Resist formulations based on these polymers were exposed at the 157 nm wavelength to produce high-resolution images. The synthesis and structures of these new materials and the details of their processing will be presented.

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Outlook for 157-nm resist design

Cited by 57 publications

References 0 publications

Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Fluoropolymers for 157 nm Lithography: Performance of Single Layer Resists.

Organic imaging materials: a view of the future

The Design of Resist Materials for 157nm Lithography.

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