Outdiffusion Through Silicon Oxide and Silicon Nitride Layers on Gallium Arsenide

Gyulai, J.; Mayer, J. W.; Mitchell, I.V.; Rodriguez, Vincent

doi:10.1063/1.1653422

Cited by 120 publications

(26 citation statements)

References 6 publications

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“…Hence, traces of GaO oxide could be located out of the interface and are presumably formed through Ga outdiffused into silicon oxide, as the SiO 2 ap- pears to be a weak diffusion barrier for Ga. 35 Concerning the reported c-Ga 2 O 3 /GaAs structure which displays a very low interface state density, 2,3 we remark that such a structure in the samples with the lowest interface state density ͑i.e., G and F͒ is unlikely here; on the one hand, we have found that detected oxidized gallium prevails in its lower oxidation state, and, on the other hand, the increase of the unpinning index is also related to the onset of ͓Ga-Si͔. As shown above, the Ga-O bonds are strongly related with the gap states.…”

Section: B Interrelations Of Chemical and Electronic Structures Of Tmentioning

confidence: 79%

Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

Ivančo

Kubota

Kobayashi

2005

Journal of Applied Physics

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Comparison of density functional theory methods as applied to compound semiconductor-oxide interfaces: Slab versus cluster models Surface and interface properties of In 0.8 Ga 0.2 As metal-insulator-semiconductor structuresThe GaAs surface with the native oxide formed by wet etching has been gradually deoxidized via evaporation of a silicon overlayer. Both chemical and electronic properties of such structures have been examined by x-ray photoelectron spectroscopy ͑XPS͒ and "XPS under biases," respectively. The latter technique enables a direct assessment of the interface state density of insulator/ semiconductor interfaces. We have concluded that gap states incident to the native oxide/GaAs interface have annihilated due to replacement of Ga-O bonds by Ga-Si and As-Si bonds.

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Section: B Interrelations Of Chemical and Electronic Structures Of Tmentioning

confidence: 79%

Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

Ivančo

Kubota

Kobayashi

2005

Journal of Applied Physics

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“…[9][10][11] For example, these dielectrics are used for surface protection, electrical insulation in laser diodes, antireflection coatings, and distributed Bragg reflectors, and for selective quantum well (QW) intermixing. The previous studies of SiO 2 /and SiN x /GaAs junctions have revealed Ga diffusion into the insulators, [12][13][14] As diffusion into the insulators, 13 As-cluster formation due to nitridation and annealing of GaAs, 15 annealing-induced improvement of the interfaces, 15,16 and defect formation at high-temperature annealings. 17 Recently, it was also reported that pre-treatment of SiO 2 /GaAs interface has an effect on GaInAsN QW photoluminescence (PL) and Ga 3d photoemission, 8 exemplifying the significance of the interface engineering.…”

mentioning

confidence: 98%

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

Dahl

Polojärvi

Salmi

et al. 2011

Applied Physics Letters

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SiO2 and SiNx layers are routinely deposited onto III-V(100) surfaces at different device processing steps. We elucidate these insulator-interface properties with photoemission and photoluminescence (PL) of SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum wells (QWs). Post-growth annealing led to an increase of the QW-PL intensity, of which origin can be clearly linked to the SiO2 and SiNx interfaces. Concomitantly, Ga2O–related photoemission increased, indicating useful formation of Ga2O at both insulator interfaces. Furthermore, higher Ga-oxidation-state emission, identified with Ga diffused into SiO2 and SiNx, correlates with the blue-shift of the QW-PL wavelength. Also, interfacial As-As related photoemission was identified.

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“…To decide whether this is an influence of the surface of the substrate (OKAMOTO, SAKATA) or the effect of out-diffusion (TUCK et al 1979;GYULAI et al) heat treatment experiments were done. It was supposed that the "out-" and the ''in-" diffusion have the same probability (TUCK 1988).…”

Section: Resultsmentioning

confidence: 99%

The Mechanism as SI GaAs Substrate Influences the Resistivity of the Epitaxial Layer

Somogyi

1992

Cryst. Res. Technol.

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It is known that it is possible to grow a semi-insulating or, at least, a high resistivity GaAs epitaxial layer without doping on an SI GaAs substrate by VPE. The SI substrate is suspected as the originator of the high resistivity intermediate layer and diffusion and/or out-diffusion are accepted as mechanisms explaining this effect. In this work carrier concentration depth profiles were studied in various GaAs multi-layered epitaxial structures grown on SI GaAs substrates before and after various heat treatment procedures in order to study the diffusion and outdiffusion processes. It is concluded that the role of the diffusion is negligible and the out-diffusion process is insignificant, and the main, i.e. the determining effect in the compensation process is the growth mechanism of the layer. The impurities set free from the Substrate by chemical etching processes rebuilt into the growing layer. In addition formation of EL2 centres may be initiated by As rich gas phase composition following the in-situ etching.

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Outdiffusion Through Silicon Oxide and Silicon Nitride Layers on Gallium Arsenide

Cited by 120 publications

References 6 publications

Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

Deoxidation of gallium arsenide surface via silicon overlayer: A study on the evolution of the interface state density

Properties of the SiO2- and SiNx-capped GaAs(100) surfaces of GaInAsN/GaAs quantum-well heterostructures studied by photoelectron spectroscopy and photoluminescence

The Mechanism as SI GaAs Substrate Influences the Resistivity of the Epitaxial Layer

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