Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS<sub>2</sub>/GeC van der Waals heterostructure

Chen, Kaiyun; Yan, Xue; Deng, Junkai; Bo, Cunle; Song, Mengshan; Kan, Dongxiao; He, Jiabei; Huo, Wangtu; Liu, Jefferson Zhe

doi:10.1039/d3nr05610d

Cited by 3 publications

(3 citation statements)

References 44 publications

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“…Raman spectra were calculated using the Fonari–Stauffer method . We doped the charge and maintained the electrical neutrality of the system through background charges. , …”

Section: Methodsmentioning

confidence: 99%

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Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe₂ with an Electric Double Layer Interface

Su,

Li,

Liu

et al. 2024

J. Phys. Chem. C

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Prominent electron−phonon interactions in transition metal dichalcogenides (TMDCs) play an important role in remarkable charge lattice-modulated structures. 1T′-TaTe 2 flakes with the room temperature (RT)-and low temperature (LT)modulated electronic states and trimerized states have been recently discovered to have a different stacking character and lattice structure. However, the role of carrier doping in the chargelattice modulation of two-dimensional (2D) materials remains elusive. Here, based on the electron-double-layer (EDL) of the liquid gate, we demonstrated the experimental observation of electric field-induced electron doping-modulated intralayer and interlayer interactions in 1T′-TaTe 2 flakes. Remarkable tuning of the Raman modes can be observed by changing the carrier doping of 1T′-TaTe 2 (RT-TaTe 2 ) flakes at room temperature. The modulated intralayer and interlayer vibration modes originating from the changing carrier density show a doping-induced electron− phonon interaction and are associated with band structures, which are further verified using first-principles calculations. Such electrical control of charge lattice-modulated structures in an electrical gating geometry provides a new degree of charge-lattice modulation to modify the physical properties in 2D systems.

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“…Raman spectra were calculated using the Fonari–Stauffer method . We doped the charge and maintained the electrical neutrality of the system through background charges. , …”

Section: Methodsmentioning

confidence: 99%

“…34 We doped the charge and maintained the electrical neutrality of the system through background charges. 35,36 ■…”

Section: T H Imentioning

confidence: 99%

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe₂ with an Electric Double Layer Interface

Su,

Li,

Liu

et al. 2024

J. Phys. Chem. C

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“…These materials are distinguished by their unique physical and chemical properties, making them highly suitable for a wide range of applications in optoelectronics, thermoelectrics, photovoltaics, and catalysis. Furthermore, novel 2D material prediction ( Ren et al, 2022a ), strain engineering ( Li et al, 2023 ), adsorption ( Ren et al, 2022b ), doping ( Chen et al, 2024 ), defect ( Luo et al, 2023 ), size effects ( Ren et al, 2023 ), and the application of external electric fields ( Sun et al, 2017 ) have proven to be effective approaches to further expand the applications of 2D materials.…”

Section: Introductionmentioning

confidence: 99%

Editorial: Theoretical study of two-dimensional materials for photocatalysis and photovoltaics

Ren,

Liu,

Palummo

et al. 2024

Front. Chem.

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Intralayer strain tuned interlayer magnetism in bilayer CrSBr

Liu,

Wang,

Zhang

et al. 2024

Phys. Rev. B

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Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS₂/GeC van der Waals heterostructure

Abstract: The out-of-plane pressure and electron doping can affect the interlayer interaction in the van der Waals materials and modify their crystal structure and physical and chemical properties. In this study,...

Cited by 3 publications

References 44 publications

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe₂ with an Electric Double Layer Interface

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe₂ with an Electric Double Layer Interface

Editorial: Theoretical study of two-dimensional materials for photocatalysis and photovoltaics

Intralayer strain tuned interlayer magnetism in bilayer CrSBr

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Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS2/GeC van der Waals heterostructure

Abstract: The out-of-plane pressure and electron doping can affect the interlayer interaction in the van der Waals materials and modify their crystal structure and physical and chemical properties. In this study,...

Cited by 3 publications

References 44 publications

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe2 with an Electric Double Layer Interface

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe2 with an Electric Double Layer Interface

Editorial: Theoretical study of two-dimensional materials for photocatalysis and photovoltaics

Intralayer strain tuned interlayer magnetism in bilayer CrSBr

Contact Info

Product

Resources

About

Out-of-plane pressure and electron doping inducing phase and magnetic transitions in GeC/CrS₂/GeC van der Waals heterostructure

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe₂ with an Electric Double Layer Interface

Electrostatic Doping of Electron–Phonon Interaction in 1T′-TaTe₂ with an Electric Double Layer Interface