Out of plane anisotropic magnetoresistance and planar Hall effect in epitaxial film of La0.8Sr0.2MnO3

Abstract

We study the anisotropic magnetoresistance and planar Hall effect of La0.8Sr0.2MnO3 when the field is rotated out of the film plane. We fit the data with a model, which consists of two independent contributions related to (a) the orientation of the magnetization relative to the crystal axes and (b) the orientation of the magnetization relative to the current. We find that the first contribution exhibits a two-fold symmetry, which cannot be explained by the angular dependence of the magnetization magnitude, suggesting an intrinsic source which reflects a deviation from cubic symmetry.

Temperature dependence of the magnetization of La0.67Sr0.33MnO3 thin films on LaAlO3

“…Substrate engineering at perovskite heterointerfaces through strain, termination control, or oxygen octahedral coupling has emerged as a promising route to stabilize novel physical properties in these materials. [1][2][3][4][5][6][7][8][9][10][11] For example, it has been shown that the induced epitaxial strain arising at different substrate interfaces with thin films of the same magnetic oxide can lead to the occurrence of diverse magnetic phases. 12 The epitaxial strain induced distortion of the oxygen octahedron in ABO 3 perovskite thin films leads to anisotropic hopping between different BO 6 orbitals and thus to differences in magnetic ordering in-plane and out-of-plane of the film.…”

High-temperature ferromagnetic insulating phase in strained La0.8Sr0.2MnO3 thin films

“…In contrast, fewer studies have been conducted on strained La 1−x Sr x MnO 3 (x = 0.2, LSMO(8/2)) films [23,[26][27][28], due to the relatively low Curie temperature. [1] Recent efforts have emphasized mainly the effects of oxygen vacancies on the crystalline structure and electronic properties of LSMO(8/2) films [26,[28][29][30][31][32]. However, the effect of misfit strain on the structure and corresponding magnetism/electrical resistivity transition of epitaxial LSMO(8/2) films remains largely uninvestigated.…”

Surface Electronic Structure of Post-Annealed La_0.67Sr_0.33MnO₃ Epitaxial Thin Films on SrTiO₃(100)

“…The doped Mn-oxides (R1-xMxMnO3 where R is La or Nd and M is Sr, Ba, Ca) have been attracting much attention in an area of spintronics because of various electrical and magnetic properties such as a colossal magnetoresistance, metal-insulator transition, anisotropic magnetoresistance, and so on [1][2][3][4][5][6][7][8][9][10]. Among these materials, La0.67Sr0.33MnO3 (LSMO) is promising material for the spintronics device due to its ferromagnetism at room temperature [11].…”