Oscillations up to terahertz frequency in resonant tunneling diodes

Abstract

We investigate the THz current oscillations in resonant tunneling diodes (RTD) oscillators with the transient drift‐diffusion model. The oscillation frequencies have a strong dependence on the biased voltage and doping concentration. With proper biased voltage and doping concentration, the high frequency up to THz can be obtained. The simulations are helpful to deepen the understanding of physical mechanism and guide to improve the performances of RTDs and RTD oscillators. The investigations make RTDs promising candidates as THz sources at room temperature.