“…[18] Therefore, the delocalization of electrons between the C3-position of 3 a and the C4-position of 4 B, and that between the C4-position of 3 a and the C2-position of 4 B, may be the major driving force for the distal selective DA reaction. In a similar manner, the observed opposite proximal selectivity in the case of 3 f can be explained by the distortion [6i, 9f] and electronic properties [18] of 3 f (i.e., the C4-position of 3 f is more electrophilic). The properties of 3 a and 3 b can be attributed to the electron-donating inductive effects of the Si and Sn atoms, respectively, and those of 3 f can be attributed to the electron-withdrawing inductive effect of the O atom (Allred-Rochow electronegativities: O, 3.5; C, 2.5; Si, 1.7; Sn, 1.7).…”