Origins of photoluminescence degradation in porous silicon under irradiation and the way of its elimination

Lenshin, A. S.; Seredin, P. V.; Кашкаров, В. М.; Minakov, D. A.

doi:10.1016/j.mssp.2017.03.020

Cited by 24 publications

(11 citation statements)

References 14 publications

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“…Poly(acrylic acid) is a benign organic molecule, which is used widely for industrial applications such as disposable diapers, detergents and adhesives. Furthermore, it attracted limited optoelectronic applications such as for the formation of fluorescent and photoresponsive supramolecular polymer gel [9], for the passivation of the fluorescent-porous silicon [10], as cross-linking agent in fluorescent label preparation in cancer cell imaging [11], and for surface functionalization by grafting for preparation of fluorescent-based bioassays [12]. Recently, clustered-triggered emission in amorphous PAA is observed where strong NUV phosphorescence in solution and solid-state forms [13].…”

Section: Introductionmentioning

confidence: 99%

Strong visible-light emission in annealed poly(acrylic acid)

Tarekegne¹,

Janting²,

Ou³

2020

Opt. Mater. Express

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An intense and broadband photoluminescence emission is demonstrated in a biocompatible film produced by thermal annealing of poly(acrylic acid) (PAA). The annealing process enhances the emission intensity from weakly emitting sub-luminophores of C-O and C=O functional groups by a factor of more than two orders of magnitude. The emission property can be sensitively tuned by the annealing temperature, duration, the PAA solution preparation conditions such as solvent type and solvent:PAA ratio. The strong luminescence is attributed to the formation of rigid molecular structure due to aggregation and crosslinking. FTIR measurements show that the aggregation and crosslinking processes subdue nonradiative recombination pathways.

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Section: Introductionmentioning

confidence: 99%

Strong visible-light emission in annealed poly(acrylic acid)

Tarekegne¹,

Janting²,

Ou³

2020

Opt. Mater. Express

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“…•100 [11]. The penetration depth of the X-rays into por-Si close to the critical angle is about several tenths of nanometers, which is comparable with the depth of PL excitation [2,4].…”

Section: Methodsmentioning

confidence: 85%

“…Porous silicon (por-Si) is a compound multiphase material and its composition and functional properties are highly dependent on the conditions of its formation [1][2][3]. Porous silicon is composed of crystalline and amorphous silicon, as well as silicon oxides with different oxidation degrees (SiO x ), a dependence on the technology of its fabrication.…”

Section: Introductionmentioning

confidence: 99%

“…Porous silicon is composed of crystalline and amorphous silicon, as well as silicon oxides with different oxidation degrees (SiO x ), a dependence on the technology of its fabrication. The surface of porous silicon also involves Si-OH bonds as well as silicon-hydrogen bonds [2,4]. The most interesting properties of por-Si in terms of its practical use in optoelectronics, sensor applications, and biomedicine that distinguish it from the bulk crystalline silicon are its high specific surface area, characterized by porosity index and pore sizes, as well as photoluminescence (PL) in the visual spectral range.…”

Section: Introductionmentioning

confidence: 99%

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Features of the Composition and Photoluminescent Properties of Porous Silicon Depending on Its Porosity Index

et al. 2023

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Porous silicon samples with a porosity index of 5% to 80% were obtained in this work by electrochemical etching, and their photoluminescence properties were also studied. The porosity index was calculated according to the data from X-ray reflectometry. The composition of the surface was controlled by ultra-soft X-ray spectroscopy and infrared (IR) spectroscopy. The degree of the sample surface oxidation increased with the porosity enhancement. Two known mechanisms of photoluminescence in porous silicon were detected that are related to the composition and morphology of its surface. The values of the porosity index specifying the dominations of these mechanisms were determined. Enhancement of photoluminescence was shown to be attributed to an increase in the porosity index.

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“…the increase in the band gap of the PSi/Co samples, could be resulted from the oxygen atoms forming cobalt oxide compounds at the PSi/Co interface for short deposition times [28][29][30]. On the other hand, observed redshift in the PL spectra of PSi/Co samples with increasing deposition time, has arisen from the clustering Co nanoparticle on the surface which causes an increase in the number of non-radiative centers [31,32]. The results of our PL analyses show that the origin of the effective room temperature PL in PSi/Co nanostructures is attributed to some different physical mechanisms, such as surface effects, in addition to the quantum confinement effect.…”

Section: Photoluminescence Analysesmentioning

confidence: 99%

Effect of the synthesis conditions on the properties of Co embedded porous Si nanostructures

Çetinel

Artunç

Tarhan

2019

Materials Science and Engineering: B

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The electrodeposition of cobalt in the porous silicon (PSi) substrate was investigated in terms of the deposition times and current densities. The PSi/Co samples were characterized by SEM, XRD, Raman, and photoluminescence (PL) spectroscopies. The results indicated that for all current densities, the PL intensities of PSi/Co samples with shorter deposition times (t s ≤ 20 min) increased due to spherical Co nanoparticles (NPs) could be created the new recombination centers, compared to that of the undeposited PSi. On the other hand, the PL intensity of PSi/Co samples significantly decreased at longer deposition times (t l > 20 min) because of larger Co NP cluster promoted the formation of non-radiative centers. The increased PL intensities in samples with t s were attributed to both the quantum confinement effect and surface effects. PL analyses also suggested that after exposure to air for 60 days, PL characteristics of PSi/Co were stabilized depending on deposition time and current density. how structural, morphological and PL properties of PSi/Co nanostructures vary with the Co nanoparticles deposited via the

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Origins of photoluminescence degradation in porous silicon under irradiation and the way of its elimination

Cited by 24 publications

References 14 publications

Strong visible-light emission in annealed poly(acrylic acid)

Strong visible-light emission in annealed poly(acrylic acid)

Features of the Composition and Photoluminescent Properties of Porous Silicon Depending on Its Porosity Index

Effect of the synthesis conditions on the properties of Co embedded porous Si nanostructures

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