Origins of etch pits in β-Ga2O3(010) single crystals

Hanada, Kenji; Moribayashi, Tomoya; Koshi, Kimiyoshi; Sasaki, Kohei; Kuramata, Akito; Ueda, Osamu; Kasu, Makoto

doi:10.7567/jjap.55.1202bg

Cited by 67 publications

(38 citation statements)

References 25 publications

(27 reference statements)

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“…Figure 6d presents STEM analysis performed at the GaN/Ga2O3 interface. The shell presents the same structure as the structure of β-Ga2O3 (020) plane [63]. Combined with the fact that their parameters correspond to the theoretical ones, we can confirm that the oxide shell formed by thermal oxidation of MBE-grown GaN NWs presents the monoclinic β-Ga2O3 crystalline phase [63].…”

Section: Structural Characterization Of the Ga 2 O 3 -Shellsupporting

confidence: 74%

“…The shell presents the same structure as the structure of β-Ga2O3 (020) plane [63]. Combined with the fact that their parameters correspond to the theoretical ones, we can confirm that the oxide shell formed by thermal oxidation of MBE-grown GaN NWs presents the monoclinic β-Ga2O3 crystalline phase [63]. The non-uniformity of the shell results from the mismatch caused by hexagonal structure of GaN, which disarranges the formation of monoclinic structure of Ga2O3 at the angles of hexagon.…”

Section: Structural Characterization Of the Ga 2 O 3 -Shellmentioning

confidence: 94%

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GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

et al. 2019

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The development of sensors working in a large range of temperature is of crucial importance in areas such as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) are a promising solution for monitoring carbon monoxide (CO). Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control them and achieve material synthesis in the first time. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form a Ga2O3-shell surrounding the GaN-core. We establish that the shell thickness can be modulated from 1 to 14 nm by changing the oxidation conditions and follows classical oxidation process: A first rapid oxide-shell growth, followed by a reduced but continuous oxide growth. We also discuss the impact of the atmosphere on the oxidation growth rate. By combining XRD-STEM and EDX analyses, we demonstrate that the oxide-shell is crystalline, presents the β-Ga2O3 phase, and is synthesized in an epitaxial relationship with the GaN-core.

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Section: Structural Characterization Of the Ga 2 O 3 -Shellsupporting

confidence: 74%

Section: Structural Characterization Of the Ga 2 O 3 -Shellmentioning

confidence: 94%

GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

et al. 2019

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“…Ga2O3 (020) plane[60]. Combined with the fact that their parameters correspond to the theoretical ones, we can conclude that the oxide shell formed by thermal oxidation of MBE grown GaN NWs presents the monoclinic β-Ga2O3 crystalline phase[54]. The non-uniformity of the shell results from the mismatch caused by hexagonal structure of GaN, which disarranges the formation of monoclinic structure of Ga2O3 at the angles of hexagon.…”

supporting

confidence: 55%

GaN/Ga2O3 Core/Shell Nanowires Growth: Nanostructures for Future CO-Sensors Developments

Bui¹,

Largeau²,

Morassi³

et al. 2019

Preprint

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The development of sensors for monitoring Carbon Monoxide (CO) in a large range of temperature is of crucial importance in areas as monitoring of industrial processes or personal tracking using smart objects. Devices integrating GaN/Ga2O3 core/shell nanowires (NWs) is a promising solution allowing combining the high sensitivity of the electronic properties to the states of GaN-core surface; and the high sensitivity to CO of Ga2O3-shell. Because the performances of sensors primarily depend on the material properties composing the active layer of the device, it is essential to control these properties and in first time its synthesis. In this work, we investigate the synthesis of GaN/Ga2O3 core-shell NWs with a special focus on the formation of the shell. The GaN NWs grown by Plasma-assisted molecular beam epitaxy, are post-treated following thermal oxidation to form Ga2O3-shell surrounding the GaN-core. We establish that the Ga2O3-shell thickness can be modulated from 1 up to 14 nm by changing the oxidation conditions, and follows the diffuse-controlled reaction. By combining XRD-STEM and EDX analysis, we also demonstrate that the oxide shell formed by thermal oxidation is crystalline and presents the β-Ga2O3 crystalline phase, and is synthesized in epitaxial relationship with the GaN-core.

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“…Figure 3(a) shows a type-F etch pit. 18) As the etching proceeds further, the shape of the type-F etch pit remains the same. This suggests that the type-F defect contains a core, thus a dislocation, along the [010] direction.…”

Section: Etch Pit Methodsmentioning

confidence: 99%

Relationship between crystal defects and leakage current in β-Ga₂O₃ Schottky barrier diodes

Kasu

Hanada

Moribayashi

et al. 2016

Jpn. J. Appl. Phys.

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We fabricated Schottky barrier diodes (SBDs) on the entire surface of a ð010Þ β-Ga 2 O 3 single crystal, and investigated the leakage current in both forward and reverse directions. Subsequently, we investigated the distribution of dislocation and void etch pits on the entire surface. The dislocation etch pit density on the surface ranged from <1 ' 10 3 to 6 ' 10 4 , and its average was 1.1 ' 10 4 cm %2 . The void etch pit density on the surface ranged from <5 ' 10 2 to 7 ' 10 3 , and its average was 6 ' 10 3 cm %2 . From a comparison between the SBD leakage current and the dislocation and void etch pit densities, we found that dislocations are closely related to the SBD reverse leakage current, and that not all voids produce the leakage current.

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Origins of etch pits in β-Ga₂O₃(010) single crystals

Cited by 67 publications

References 25 publications

GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

GaN/Ga<sub>2</sub>O<sub>3</sub> Core/Shell Nanowires Growth: Nanostructures for Future CO-Sensors Developments

Relationship between crystal defects and leakage current in β-Ga₂O₃ Schottky barrier diodes

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Origins of etch pits in β-Ga2O3(010) single crystals

Cited by 67 publications

References 25 publications

GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

GaN/Ga2O3 Core/Shell Nanowires Growth: Towards High Response Gas Sensors

GaN/Ga<sub>2</sub>O<sub>3</sub> Core/Shell Nanowires Growth: Nanostructures for Future CO-Sensors Developments

Relationship between crystal defects and leakage current in β-Ga2O3 Schottky barrier diodes

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Origins of etch pits in β-Ga₂O₃(010) single crystals

Relationship between crystal defects and leakage current in β-Ga₂O₃ Schottky barrier diodes