Original Design Procedure For Self-Reconfigurable Low Noise Figure and High RF Input Power Overdrive LNAs: Application To X-Band GaN MMICs

Abstract

This article proposes an original method for designing Low Noise Amplifiers on wide-bandgap RF technologies. These LNAs are able to withstand high electromagnetic signals, like those used in electronic warfare, while providing high detectivity. The study presents the original design procedure of a single-stage LNA and a two-stage LNA based on the same strategy. These self-reconfigurable LNAs make it possible to switch from a high detectivity mode (low NF) to a high linearity mode (high input compression mode IP1dB). This design strategy is compared to a robust LNA design, which uses a larger transistor size for improved linearity at the cost of a slight NF degradation. RF step-stress results has been performed up to 30 dBm at the input of the amplifier without any destruction, and providing stable S-parameters and noise figure.