Origin of the retention loss in ferroelectric Hf0.5Zr0.5O2-based memory devices

Interplay between oxygen defects and dopants: effect on structure and performance of HfO2-based ferroelectrics

“…47 Depolarization fields caused a degradation of the retained state for oxygenpoor films, as detected in the relaxed polarization measured at room temperature after one second relaxation time, which for samples deposited with 0.1 s ozone dose time showed a reduction of 16%. Similar findings were reported by Chouprik et al 100 who studied the mechanism of retention loss and imprint. They calculated an activation energy of 0.54 eV for the both negative and positive imprint through sample aging at different temperatures.…”

An Overview of Ferroelectric Hafnia and Epitaxial Growth

“…Chouprik et al reported the retention loss and imprint effect in ferroelectric Hf 0.5 Zr 0.5 O 2 thin films, which caused by built‐in electric fields emerging during the ferroelectric aging process. [ 126 ] The built‐in field might be attributed to long‐term charge diffusion process and short‐term trapping/detrapping effect.…”

1T1C FeRAM Memory Array Based on Ferroelectric HZO With Capacitor Under Bitline

“…Smaller polarization changes were observed at 500 °C during the data retention test at 85 °C for 1000 min than 450 °C. The retention result at 500 °C can be projected to result in a slight degradation, even after 10 years applying a fitting model of power-law for the result above 10 min, considering charge trapping and the migration [13,14]. These results indicate that MFM with RTA at 500 °C or above enables significant polarization and high reliability.…”