Origin of the Open Circuit Voltage of Plastic Solar Cells

Brabec, Christoph J.; Cravino, Antonio; Meißner, D.; Sariçiftçi, Niyazi Serdar; Fromherz, T.; Rispens, Minze T.; Sánchez, Luis; Hummelen, Jan C.

doi:10.1002/1616-3028(200110)11:5<374::aid-adfm374>3.0.co;2-w

Cited by 1,742 publications

(1,291 citation statements)

References 19 publications

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“…In one study interface dipole layers of similar magnitude were found between the C 60 layer and the electrodes [32]. In another study it was shown that the open-circuit voltage of the PVDs was nearly independent of the metal workfunction and linearly proportional to the electron affinity of the C 60 derivative [33]. Although the interfaces were created under different experimental conditions, the results may properly be ascribed to an alignment of the LUMO of the C 60 -derivative to the Fermi level of the metal electrode.…”

Section: On Aumentioning

confidence: 81%

On interface dipole layers between C 60 and Ag or Au

Veenstra

Heeres

Hadziioannou

et al. 2002

Applied Physics A: Materials Science & Processing

103

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C 60 layers on polycrystalline Ag and Au are studied by photoelectron spectroscopy. At these metal/C 60 interfaces an electron transfer occurs from the metal to the lowest unoccupied orbital of C 60 . We found in the case of the polycrystalline Ag/C 60 interface a dipolar layer with its associated electric field in the direction corresponding to the charge transfer, so pointing from the substrate to the adsorbent. Yet, at the Au/C 60 interface we observed an overall electric field pointing from C 60 towards the metal. We discuss our observations in terms of charge transfer, screening and hybridization effects and propose the occurrence of a hybridization mechanism similar to back-bonding at the Au/C 60 interface. We show that the alignment of energy levels at the metal/C 60 interface cannot simply be deduced using the metal workfunction and the frontier orbitals of C 60 , including screening effects, since hybridization effects may strongly alter the interfacial energy level structure. Our experimental findings on the polycrystalline metal/C 60 interfaces indicate an at-most weak dependence of the Fermi level of the C 60 overlayer on the workfunction of the polycrystalline metal substrate. These interfaces are found in donoracceptor-based organic photovoltaic devices and our results may help to understand the electrical characteristics of these devices.

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Section: On Aumentioning

confidence: 81%

On interface dipole layers between C 60 and Ag or Au

Veenstra

Heeres

Hadziioannou

et al. 2002

Applied Physics A: Materials Science & Processing

103

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“…These monomer units, especially in combination with electron-poor aromatic units, lead to novel polymeric electron donor structures [4][5][6][7][8] that possess a number of properties useful for increasing the photovoltaic response [2], such as an energy level alignment with electron acceptors [9]; a low energy gap which favours the light harvesting and increase the short-circuit current of the device [4]; a fair hole mobility [10] and good solubility in organic solvents and film forming characteristics [11].…”

Section: Introductionmentioning

confidence: 99%

Ternary thiophene–X–thiophene semiconductor building blocks (X=fluorene, carbazole, phenothiazine): Modulating electronic properties and electropolymerization ability by tuning the X core

Tacca

Pò

Caldararo

et al. 2011

Electrochimica Acta

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To achieve rationalization criteria for target-oriented molecular design of Th-X-Th (Th = thiophene) semiconductor building blocks, we have carried out an extensive investigation on the effects of the X core (X = fluorene, carbazole or phenothiazine) on the electronic properties and polymerization ability of Th-X-Th monomers and on the electronic and structural properties of the corresponding periodic conducting polymers -(Th-X-Th) n -, obtained by electropolymerization and, for

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“…Typically in thin-film tandem cells, ultrathin doped layers are employed to form tunnel junctions between the sub-cells with extremely high doping 2,13,14 . Although ultrathin heavily n-doped a-Si:H film can be obtained, hole collection layer (HCL) for polymer cells such as MoO 3 sulfonate (PEDOT:PSS) can be neither ultrathin nor highly doped [20][21][22] . Therefore, we applied ZnO:Al or indium tin oxide (ITO) as interfacial conducting layers (ICLs) between a-Si:H and polymer cells, to promote electrical conduction.…”

Section: Resultsmentioning

confidence: 99%