Origin of the high photoconductive gain in AlGaN films

Moustakas, T. D.; Misra, M.

doi:10.1117/12.736772

Cited by 14 publications

(19 citation statements)

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“…Thus, by using GaN or AlGaN, UV detectors can be fabricated with either high gain/low speed, or vice versa. [28] The data in Figure 22 indicate that AlGaN photodetectors have higher (μτ) products than GaN ones, even though they are expected to have lower mobility than GaN because of alloy scattering and shorter lifetime than GaN because of their more defective nature. To account for this anomaly our group investigated the structure of the AlGaN alloys and found that these materials consist of domains that are atomically ordered and others that have random alloy structure (partial ordering ordering).…”

Section: Photodetectorsmentioning

confidence: 99%

“…As shown in Figure 21, the AlGaN-based material system is well suited for UV photodetectors because its direct band gap can be tuned from 360 to 200 nm by changing the alloy composition, enabling true visible-blind or solar-blind detectors. [21][22][23][24][25][26][27][28][29] Excellent reviews on UV photodetectors were presented in Refs 23, 26.…”

Section: Photodetectorsmentioning

confidence: 99%

“…[21][22][23][24][25][26][27][28][29] To find the origin of this variation, we fabricated a number of UV photoconductive detectors from GaN of varying resistivity and AlGaN of various compositions and determined the (μτ) product from the gain measurements. [25,28,138] Figure 22 shows the (μτ) product for the fabricated GaN and AlGaN photoconductive detectors. [28] It is evident from these data that the (μτ) product in these photodetectors varies by many orders of magnitude and is a strong function of resistivity of the semiconductor.…”

Section: Photodetectorsmentioning

confidence: 99%

“…[25,28,138] Figure 22 shows the (μτ) product for the fabricated GaN and AlGaN photoconductive detectors. [28] It is evident from these data that the (μτ) product in these photodetectors varies by many orders of magnitude and is a strong function of resistivity of the semiconductor. Thus, by using GaN or AlGaN, UV detectors can be fabricated with either high gain/low speed, or vice versa.…”

Section: Photodetectorsmentioning

confidence: 99%

“…[20] Significant progress has been made in AlGaN-based "visible blind" or "solar blind" UV detectors to detect weak UV signals in the presence of strong ambient light in scientific research, industrial, and military applications. [21][22][23][24][25][26][27][28][29] UV electroabsorption modulators have generally received much less attention. [30][31][32][33][34][35][36] In this paper, we review progress in developing UV optoelectronic devices based on AlGaN alloys grown by plasmaassisted molecular beam epitaxy (PAMBE).…”

Section: Introductionmentioning

confidence: 99%

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Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Moustakas

2016

MRS Communications

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This paper reviews progress in ultraviolet (UV) optoelectronic devices based on AlGaN films and their quantum wells (QWs), grown by plasmaassisted molecular beam epitaxy. A growth mode, leading to band-structure potential fluctuations and resulting in AlGaN multiple QWs with internal quantum efficiency as high as 68%, is discussed. Atomic ordering in these alloys, which is different from that observed in traditional III-V alloys, and its effect on device performance is also addressed. Finally, progress in UV-light-emitting diodes, UV lasers, UV detectors, electroabsorption modulators, and distributed Bragg reflectors is presented.

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Section: Photodetectorsmentioning

confidence: 99%

Section: Photodetectorsmentioning

confidence: 99%

Section: Photodetectorsmentioning

confidence: 99%

Section: Photodetectorsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Moustakas

2016

MRS Communications

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MoSe₂/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

Sandhu

Jelonnek

Jakhar

et al. 2022

Adv Materials Inter

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of TMDs alter with the layer thickness, ranging from single to few monolayers to bulk. The individual layers in the crystalline structure of atomically thin TMD (consisting of single or few layers) are held together by weak van der Waals force of attraction. [11,12] The absence of dangling bonds allows the fabrication of LMCs on various substrates or materials with different dimensionalities due to relaxation in strain related issues which arise due to lattice mismatch and thermal mismatch between the epitaxial layer and the substrate. [13] This opens the perspectives for the development of high-quality heterojunction devices based on LMCs and 3-dimensional semiconductors as the performance of such devices depend primarily on interfacial properties. Broadband photodetection can be achieved by integrating LMCs and other bulk semiconductors to cover the wide spectrum range.Various TMDs based on metals like Molybdenum (Mo), Tungsten (W), and Tin (Sn), such as MoS 2 , MoSe 2 , WS 2 , WSe 2 , SnS 2 , etc. have emerged as promising candidates for futuristic applications. [14][15][16][17][18][19][20][21] Among them, MoS 2 has been extensively studied in the past few years for TMD-based photodetectors due to its high sensitivity, light absorption, electron mobility, and lower dimensionality. [22][23][24] On a par with MoS 2 , MoSe 2 is another TMD that possesses great potential. MoSe 2 has a variable bandgap according to its number of layers, ranging from a direct bandgap of 1.6-1.9 eV for monolayer to an indirect bandgap of 1.1 eV for bulk. [25][26][27] It shows n-type conducting channel behavior with average mobility of 50 cm 2 V -1 s -1 for its monolayer-based field-effect transistors (FETs) whereas charge mobility of 100 cm 2 V -1 s -1 has been reported for bulk MoSe 2 . [28] More notably, its absorption spectrum spans the visible to nearinfrared (NIR) wavelength spectrum. However, the performance of MoSe 2 -based photodetectors is still circumscribed in terms of responsivity, detectivity and time response. [29][30][31][32][33] The proficiency of these photodetectors can be improvised by employing the heterostructure architecture. [28,[34][35][36] Furthermore, the combination of photoactive MoSe 2 and bulk semiconductor such as silicon (Si), germanium (Ge), Gallium nitride (GaN), or other compound semiconductors can provide high-performance broadband photodetectors by exploiting the advantageous properties of both the materials. Few research groups have demonstrated the MoSe 2 /Si [28,37,38] and MoSe 2 /Ge [36] heterojunction devices that showed responsivity ranging from 270 mA W −1 Heterojunction photodiodes comprising of layered metal chalcogenides and wide-bandgap semiconductors are a promising candidate for broadband photodetection. In this work, nanolayered Molybdenum diselenide (MoSe 2 )/Gallium Nitride (GaN) based photodetector has been demonstrated from ultraviolet to near-infrared range (300-1000 nm). The performance is investigated by conducting Kelvin probe force microscopy to measure the conduction band o...

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MgZnO avalanche photodetectors realized in Schottky structures

Shan

Liu

et al. 2013

Physica Rapid Research Ltrs

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MgZnO‐based ultraviolet avalanche photodetectors (APDs) have been fabricated from Au/MgO/Mg0.44Zn0.56O/MgO/Au Schottky structures. The carrier avalanche multiplication is realized via an impact ionization process occurring in the MgO layer under relatively large electric field. The APDs exhibit an avalanche gain of 587 at 31 V bias, and the response speed of the APDs is in the order of microseconds.magnified image(© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

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Origin of the high photoconductive gain in AlGaN films

Cited by 14 publications

References 1 publication

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

MoSe₂/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

MgZnO avalanche photodetectors realized in Schottky structures

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Origin of the high photoconductive gain in AlGaN films

Cited by 14 publications

References 1 publication

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

Ultraviolet optoelectronic devices based on AIGaN alloys grown by molecular beam epitaxy

MoSe2/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths

MgZnO avalanche photodetectors realized in Schottky structures

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MoSe₂/n‐GaN Heterojunction Induced High Photoconductive Gain for Low‐Noise Broadband Photodetection from Ultraviolet to Near‐Infrared Wavelengths