Origin of the drain current bistability in polymer ferroelectric field-effect transistors

Naber, R.C.G.; Massolt, Joost; Spijkman, Mark-Jan; Asadi, Kamal; Blom, Paul W. M.; Leeuw, Dago M. de

doi:10.1063/1.2713856

Cited by 78 publications

(84 citation statements)

References 17 publications

(13 reference statements)

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“…It is known from literature that p-type semiconductors are not good at providing compensating electrons and vice versa. [40][41][42][43] As the deposition of a layer of H-PSS or Nafi on occurs from an acidic solution, it was checked whether spin coating instead with a 1 M H 2 SO 4 solution on Au gave similar results. This step actually results in washing the electrode with an acidic solution.…”

Section: Work Function Increase By H-pss and Nafi Onmentioning

confidence: 96%

Origin of Work Function Modification by Ionic and Amine‐Based Interface Layers

Reenen

Kouijzer

Janssen

et al. 2014

Adv Materials Inter

130

138

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can evolve into a successful thin fi lm photovoltaic technology. To this end, further improvements in the sunlight-toelectricity conversion effi ciency are still needed. To do so, not only the optoelectronic, active layer should be considered, but also the connection between this layer and the electrodes. This connection is facilitated by so-called work function modifi cation layers (WMLs) that serve to align the transport levels in the organic semiconductor and the conductor by modifi cation of the work function. Materials that are often used are poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS) for improving hole collection and injection in combination with an indium tin oxide (ITO) electrode and LiF for the electron contact in combination with an Al metal electrode. A new generation of WMLs fi rst introduced by Cao et al. is based on polyelectrolytes or tertiary aliphatic amines, such as poly [(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt -2,7-(9,9-dioctylfluorene)] (PFN) and the corresponding ethyl ammonium bromide. [ 1 ] Although these materials improve carrier injection or extraction in different organic diode devices, [1][2][3][4][5][6][7] the mechanism behind this improvement is not completely clear. This ambiguity hinders design, selection and optimization of new WMLs.Mechanisms that are generally considered to result in electric fi elds and concomitant work function shifts at metal-organic interfaces are doping, charge transfer, and dipole formation. [8][9][10] Regarding the work function modifi cation of amine side-groups, Lindell et al. [ 11 ] found by photoelectron spectroscopy and density functional calculations that the electron donor para-phenylenediamine chemisorbs onto atomically clean Ni in vacuum. [ 12 ] Due to partial electron transfer from the amine unit, a work function reduction of 1.55 eV is achieved, resulting in a less deep Fermi level. This explanation is not likely to hold for the technologically more relevant procedure on which we shall focus, being the deposition of WMLs from solution on a metal at atmospheric pressure: the metal is not atomically clean, which likely inhibits chemisorption. In other work by Zhou et al. [ 13 ] it is shown that the work function reduction, at atmospheric pressure, by the amine groups in poly(ethylenimine ethoxylated) (PEIE), is generally the same on different conductors. Work function modifi cation by polyelectrolytes and tertiary aliphatic amines is found to be due to the formation of a net dipole at the electrode interface, induced by interaction with its own image dipole in the electrode. In polyelectrolytes differences in size and side groups between the moving ions lead to differences in approach distance towards the surface. These differences determine magnitude and direction of the resulting dipole. In tertiary aliphatic amines the lone pairs of electrons are anticipated to shift towards their image when close to the interface rather than the nitrogen nuclei, which are sterically hindered by the alkyl side chains. ...

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Section: Work Function Increase By H-pss and Nafi Onmentioning

confidence: 96%

Origin of Work Function Modification by Ionic and Amine‐Based Interface Layers

Reenen

Kouijzer

Janssen

et al. 2014

Adv Materials Inter

130

138

View full text Add to dashboard Cite

show abstract

“…From this consideration, many researchers believed that such large depolarization field did the main contribution to the much faster degradation of this depletion state. 10,11 However, further study indicates that if depletion voltage is high enough, semiconducting layer can be switched to inversion and minority carriers can accumulate at ferroelectric/semiconductor interface to compensate polarization charges. Thus ferroelectric polarization is expected to be stable.…”

Section: Resultsmentioning

confidence: 99%

“…Some researchers argued that the hysteresis was due to bistable positive and negative polarization states of the P(VDF-TrFE) film, [5][6][7] while there were still some consideration that the cause of hysteresis was due to one polarization state and one depolarization state. 10 Furthermore, the whole C-V curves shift toward positive voltage direction, which should be due to the existence of space charges in Al 2 O 3 layer and/or ferroelectric films injected during the electrical application. These space charges produce an internal electric field resulting in the shift of the transition voltage from the accumulation to the inversion states and vice versa.…”

Section: Resultsmentioning

confidence: 99%

“…9 In P(VDF-TrFE)/P3HT FeFETs, R. Naber et al demonstrated that the bistability originated from switching between either polarized or depolarized state of the ferroelectric dielectric. 10 In P(VDF-TrFE)/PTAA FeFETs, polarization state in ferroelectric layer depolarized immediately after the removal of depletion voltage. 11 Obviously an effective evaluation of depolarization-driven degradation of retention performance is still absent in ferroelectric polymer-based devices.…”

Section: Introductionmentioning

confidence: 99%

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Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Zhang

Weng

et al. 2015

AIP Advances

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Ferroelectric polymer-based memory devices have attracted much attention due to their potential in low-cost flexible memories. However, bad retention property of recorded logic states limited their applications. Though mechanisms of retention degradation in ferroelectric memories are complicated and still an open question, depolarization in ferroelectric polymer layer was regarded as the main influencing factor. Here we reported our piezoresponse force microscopy (PFM) study of retention property of polarization states on various ferroelectric polymer based structures. PFM results indicated that, as for ferroelectric/semiconductor structure and ferroelectric/insulator/semiconductor structure with thin insulating layer, both positive and negative polarization states could retain for a relatively long time. Mechanisms of good retention of polarization states were discussed. The discrepancy in bad retention of logic states and good polarization retention of ferroelectric layer was also analyzed.

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“…For organic semiconductors in contact with the ferroelectric random copolymer poly͑vinylidene fluoride-cotrifluoroethylene͒ ͓P͑VDF-TrFE͔͒ Naber et al 10 have shown that polarization in metal-ferroelectric insulatorsemiconductor diodes only occurs when majority carriers, in this case injected from a back contact, provide compensation. However, when the majority carriers are depleted, the ferroelectric depolarizes.…”

mentioning

confidence: 99%

Origin of the efficiency enhancement in ferroelectric functionalized organic solar cells

Asadi

Bruyn

Blom

et al. 2011

Applied Physics Letters

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Origin of the drain current bistability in polymer ferroelectric field-effect transistors

Abstract: Origin of the drain current bistability in polymer ferroelectric field-effect transistors Naber, R. C. G.; Massolt, J.; Spijkman, M.; Asadi, K.; Blom, P. W. M.; de Leeuw, D. M.

Cited by 78 publications

References 17 publications

Origin of Work Function Modification by Ionic and Amine‐Based Interface Layers

Origin of Work Function Modification by Ionic and Amine‐Based Interface Layers

Piezoresponse force microscopy study on ferroelectric polarization of ferroelectric polymer thin films with various structural configurations

Origin of the efficiency enhancement in ferroelectric functionalized organic solar cells

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