2022
DOI: 10.1039/d1tc05970j
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Origin of the concentration-dependent effects of N on the stability and electrical resistivity in polycrystalline Ge1Sb2Te4

Abstract: N (nitrogen) doping has been widely employed to optimize the overall performance of Ge-Sb-Te (GST) compound, yet the microscopic doping effects in the presence of the grain boundary which is...

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