This paper reports on a near zero
band gap semiconductor, Ni
x
S
y
, which significantly
enhances the photoluminescence (PL) performance of ZnO nanorods. The
structural, morphological, and optical properties of the composites
were characterized by X-ray diffraction spectroscopy (XRD), X-ray
photoelectron spectroscopy (XPS), scanning electron microscopy (SEM),
high-resolution transmission electron microscopy (HRTEM), ultraviolet–visible
spectroscopy (UV–vis), PL spectrometry, etc. The PL patterns
at an excitation wavelength (λex) of 325 nm revealed
that the 10% Ni
x
S
y
/ZnO nanorod (10NZNR) composites displayed the highest emission
intensity in the region of 420–630 nm. The relationship between
the emission intensity of ZnO and the concentration of Ni
x
S
y
demonstrated that
the PL intensity of NZNRs initially increased (<10%) and then declined
with an increase in Ni
x
S
y
content (>10%). According to PL spectra at different excitation
wavelengths and PL excitation (PLE) spectra, the visible emission
of Ni
x
S
y
/ZnO
nanorod (NZNR) composites can only be excited by light with energy
greater than that of the band gap. Studies of the morphological structures
and PL behaviors of NZNR composites have illustrated that Ni
x
S
y
considerably enhances
the visible emission of ZnO by regulating its morphology and structure.
An appropriate mechanism by which Ni
x
S
y
enhances the PL performance of ZnO has been
proposed.