Origin of photoluminescence from antimony selenide

Grossberg, Michael; Volobujeva, Olga; Penežko, A.; Kaupmees, Reelika; Raadik, T.; Krustok, J.

doi:10.1016/j.jallcom.2019.152716

Cited by 30 publications

(27 citation statements)

References 25 publications

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“…All observed peaks belong to Sb 2 Se 3 and were found and theoretically predicted also in refs. [16,[35][36][37]. The X-ray diffraction (XRD) pattern of the studied Sb 2 Se 3 microcrystals is presented in Figure 1c.…”

Section: Resultsmentioning

confidence: 99%

“…All detected XRD peaks belong to Sb 2 Se 3 . According to the peak positions, estimated lattice parameters are: a = 1.1784 nm, [16,38] Figure 2a,b illustrates the PL spectra of Sb 2 Se 3 microcrystals at different temperatures, measured with laser peak power density of 660 kW cm −2 (λ = 266 nm). At T = 3 K, only two slightly asymmetric biexciton peaks can be detected labeled as XX B and XX A , but with increasing the temperature the XX B peak vanishes and a new peak X B appears at higher photon energy.…”

Section: Resultsmentioning

confidence: 99%

“…At low excitation density, the quenching process of biexciton emission is mainly due to the thermal dissociation of biexciton into free excitons while the temperature quenching of excitonic lines is due to the thermally activated depopulation of the free excitonic level and/or to the activation of nonradiative recombination centers. The similar thermal activation energy for free Temperature dependence of E g A measured by photoreflectance [16,18] is given as a green line, the X B peak was fitted using Varshni expression (blue line), the black line for XX B peak position is just a guide to the eye. b) PL intensities of the free-excitonic and biexcitonic transitions as a function of reverse temperature.…”

Section: Wwwadvopticalmatdementioning

confidence: 99%

“…According to PR measurements made on polycrystalline samples, the bandgap energy at T = 0 K was around 1.32 eV. [16,18] There is less information about band structure of single-crystalline Sb 2 Se 3 samples. Recent optical measurements made on quasi-1D Sb 2 Se 3 single crystals revealed that the absorption edge at low temperatures can shift about 10 meV depending on polarization conditions and even more at RT.…”

Section: Introductionmentioning

confidence: 99%

“…[ 14,15 ] Defect states in polycrystalline Sb 2 Se 3 have been studied also using temperature and laser intensity‐dependent photoluminescence (PL). [ 16 ] The low‐temperature ( T = 10 K) PL spectrum was consisted of three bands at 0.94, 1.10, and 1.24 eV. The PL bands at 1.24 and 0.94 eV were found to originate from the distant and close donor–acceptor pair recombination, respectively, and the third PL band at 1.10 eV was proposed to be related to the grain boundaries.…”

Section: Introductionmentioning

confidence: 99%

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Identification of Excitons and Biexcitons in Sb₂Se₃ under High Photoluminescence Excitation Density

Krustok

Kondrotas

Nedzinskas

et al. 2021

Advanced Optical Materials

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abundant and low-cost elements like Cu, Zn, Sn, S, and Se, are also potential candidates for next-generation PV technologies. [3,4] However, kesterites have turned out to be very challenging on their way toward highly efficient thin film PV due to strong recombination of photogenerated charge carriers via various routes leading to short minority carrier lifetime (i.e., magnitude lower than in CIGS, CdTe, etc.) and diffusion length and resulting in large open circuit voltage deficit of kesterite solar cells. [3,[5][6][7][8] It is, therefore, obvious that more research is required to find the alternative inexpensive and earth abundant materials for efficient thin-film solar cells. One of the promising absorber material candidates among the inorganic semiconductors being in the spotlight these days is antimony triselenide (Sb 2 Se 3 ). The efficiencies of the corresponding thin-film solar cells have already boosted to 9.2% in a very short time. [9][10][11] Quasi-1D antimony triselenide belongs to a family of inorganic binary A V -B VI compounds and indeed has very attractive properties, such as proper optical bandgap (1.1-1.2 eV) for a solar absorber, a single phase structure, high light absorption coefficient (10 5 cm −1 ), low toxicity, and high element abundance. [12] It was shown that due to the very high absorption coefficient the photons with wavelengths λ > 800 nm are completely absorbed within the first 400 nm of Sb 2 Se 3 film, enabling much thinner absorber layers compared to the usual thin film solar cells. [13] Despite extensive research there are still problems related to various point defects or electronic band structure of this compound. Capacitance spectro scopy studies have shown the presence of various deep donor and acceptor defects. [14,15] Defect states in polycrystalline Sb 2 Se 3 have been studied also using temperature and laser intensity-dependent photoluminescence (PL). [16] The low-temperature (T = 10 K) PL spectrum was consisted of three bands at 0.94, 1.10, and 1.24 eV. The PL bands at 1.24 and 0.94 eV were found to originate from the distant and close donor-acceptor pair recombination, respectively, and the third PL band at 1.10 eV was proposed to be related to the grain boundaries. Recent theoretical calculations showed that the defect chemistry of quasi-1D Sb 2 Se 3 is rather complicated compared to conventional semiconductors. In particular, it has been discussed that the identical defects located on nonequivalent atomic sites might have different properties. [17] All kinds of defect studies are therefore extremely important as usually defects act as powerful recombination channels and reduce the performance of the solar cell.The near-band-edge emission of Sb 2 Se 3 microcrystals is studied in detail under high photoluminescence excitation density using a pulsed UV laser (λ = 266 nm, pulse width 0.6 ns). Based on the peak energy positions and the excitation power density and temperature dependencies (T = 3-110 K) of the photoluminescence spectra, the emission is interpreted as a reco...

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Wwwadvopticalmatdementioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 3 more Smart Citations

Identification of Excitons and Biexcitons in Sb₂Se₃ under High Photoluminescence Excitation Density

Krustok

Kondrotas

Nedzinskas

et al. 2021

Advanced Optical Materials

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Sb₂Se₃ Thin‐Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology

et al. 2022

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Binary Sb2Se3 semiconductors are promising as the absorber materials in inorganic chalcogenide compound photovoltaics due to their attractive anisotropic optoelectronic properties. However, Sb2Se3 solar cells suffer from complex and unconventional intrinsic defects due to the low symmetry of the quasi‐1D crystal structure resulting in a considerable voltage deficit, which limits the ultimate power conversion efficiency (PCE). In this work, the creation of compact Sb2Se3 films with strong [00l] orientation, high crystallinity, minimal deep level defect density, fewer trap states, and low non‐radiative recombination loss by injection vapor deposition is reported. This deposition technique enables superior films compared with close‐spaced sublimation and coevaporation technologies. The resulting Sb2Se3 thin‐film solar cells yield a PCE of 10.12%, owing to the suppressed carrier recombination and excellent carrier transport and extraction. This method thus opens a new and effective avenue for the fabrication of high‐quality Sb2Se3 and other high‐quality chalcogenide semiconductors.

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Recent Advances in Antimony Selenide Photodetectors

Liu,

Chen,

et al. 2024

Advanced Materials

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Photodetectors (PDs) rapidly capture optical signals and convert them into electrical signals, making them indispensable in a variety of applications including imaging, optical communication, remote sensing, and biological detection. Recently, antimony selenide (Sb2Se3) has achieved remarkable progress due to its earth‐abundant, low toxicity, low price, suitable bandgap width, high absorption coefficient, and unique structural characteristics. Sb2Se3 has been extensively studied in solar cells, but there's a lack of timely updates in the field of PDs. A literature review based on Sb2Se3 PDs is urgently warranted. This review aims to provide a concise understanding of the latest progress in Sb2Se3 PDs, with a focus on the basic characteristics and the performance optimization for Sb2Se3 photoconductive‐type and photodiode‐type detectors, including nanostructure regulation, process optimization, and stability improvement of flexible devices. Furthermore, the application progresses of Sb2Se3 PDs in heart rate monitoring, and monolithic‐integrated matrix images are introduced. Finally, this review presents various strategies with potential and feasibility to address challenges for the rapid development and commercial application of Sb2Se3 PDs.

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Origin of photoluminescence from antimony selenide

Cited by 30 publications

References 25 publications

Identification of Excitons and Biexcitons in Sb₂Se₃ under High Photoluminescence Excitation Density

Identification of Excitons and Biexcitons in Sb₂Se₃ under High Photoluminescence Excitation Density

Sb₂Se₃ Thin‐Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology

Recent Advances in Antimony Selenide Photodetectors

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Origin of photoluminescence from antimony selenide

Cited by 30 publications

References 25 publications

Identification of Excitons and Biexcitons in Sb2Se3 under High Photoluminescence Excitation Density

Identification of Excitons and Biexcitons in Sb2Se3 under High Photoluminescence Excitation Density

Sb2Se3 Thin‐Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology

Recent Advances in Antimony Selenide Photodetectors

Contact Info

Product

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Identification of Excitons and Biexcitons in Sb₂Se₃ under High Photoluminescence Excitation Density

Identification of Excitons and Biexcitons in Sb₂Se₃ under High Photoluminescence Excitation Density

Sb₂Se₃ Thin‐Film Solar Cells Exceeding 10% Power Conversion Efficiency Enabled by Injection Vapor Deposition Technology