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2018
DOI: 10.1016/j.ceramint.2017.12.237
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Origin of giant permittivity in Ta, Al co-doped TiO2: Surface layer and internal barrier capacitance layer effects

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Cited by 42 publications
(39 citation statements)
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“…Increasing DC bias induced the occurrence of additional step-like dielectric constant at low frequency range (< 10 2 Hz). Obviously, the additional dielectric constant plateau at low frequency is related to the electrode effect [31]. In Fig.…”
Section: Resultsmentioning
confidence: 89%
“…Increasing DC bias induced the occurrence of additional step-like dielectric constant at low frequency range (< 10 2 Hz). Obviously, the additional dielectric constant plateau at low frequency is related to the electrode effect [31]. In Fig.…”
Section: Resultsmentioning
confidence: 89%
“…This finding has triggered a burst of research activities on (A + B) co‐doped TiO 2 ceramics. So far, the dual doping in TiO 2 can be clarified into two types: (i) tri‐ and pentavalent ions co‐doping, such as (In 3+ +Nb 5+ /Ta 5+ ), (Sm 3+ +Ta 5+ ), (V 3+ +Nb 5+ ), (Sc 3+ +Nb 5+ ), (Ga 3+ +Nb 5+ /Ta 5+ /Sb 5+ ), (Yb 3+ +Nb 5+ ), (Bi 3+ +Nb 5+ ), (Dy 3+ +Nb 5+ ), (Al 3+ +Nb 5+ /Ta 5+ /Sb 5+ ), (Er 3+ +Nb 5+ ), (Y 3+ +Nb 5+ ), (Tl 3+ +Nb 5+ ), (Eu 3+ +Nb 5+ ), (Pr 3+ +Nb 5+ ), and (La 3+ +Nb 5+ ), (ii) bi‐ and pentavalent ions co‐doping, such as (Ca 2+ +Nb 5+ ), (Mg 2+ +Nb 5+ /Ta 5+ ), and (Zn 2+ +Nb 5+ ) …”
Section: Introductionmentioning
confidence: 99%
“…After a wealth of follow‐up experimental investigations, the mechanism of the CP behavior in the co‐doped TiO 2 system is still a matter of debate. Aside from the original electron‐pinned defect‐dipole model, the internal barrier layer capacitor model, the surface barrier layer capacitor model, hopping conductivity, and polarization relaxation were also suggested to account for this behavior. This fact indicates that the CP behavior in the co‐doped TiO 2 system is far from well understood, and thus more experimental evidences are needed to fully characterize this behavior.…”
Section: Introductionmentioning
confidence: 99%
“…In the past decades, giant permittivity materials with a large dielectric constant ( ε r ), low dielectric loss (tanδ), and good thermal stability have attracted much attention due to the requirements for the miniaturization of electronic devices and high‐energy storage capacitors . In 2013, the remarkable dielectric behavior of the materials, In and Nb codoped TiO 2 ‐based ceramics, was reported by Liu et al; these materials showed low dielectric loss (<5%) and large dielectric constant (~10 4 ) and had better temperature stability in the range from 80 to 450 K. Meanwhile, the authors deemed that the origin of the dielectric response was attributed to the intrinsic dielectric effect, that is, the electron pinned defect dipole (EPDD).…”
Section: Introductionmentioning
confidence: 99%
“…In 2013, the remarkable dielectric behavior of the materials, In and Nb codoped TiO 2 ‐based ceramics, was reported by Liu et al; these materials showed low dielectric loss (<5%) and large dielectric constant (~10 4 ) and had better temperature stability in the range from 80 to 450 K. Meanwhile, the authors deemed that the origin of the dielectric response was attributed to the intrinsic dielectric effect, that is, the electron pinned defect dipole (EPDD). Subsequently, based on the same design idea, a series of codoped TiO 2 ‐based ceramics with better dielectric properties were also obtained for other ions (Ca 2+ , Zn 2+ , Mg 2+ , Sc 3+ , Y 3+ , Al 3+ , In 3+ , Yb 3+ , etc., as acceptors and Nb 5+ , Ta 5+ , etc., as donors) …”
Section: Introductionmentioning
confidence: 99%