Abstract:HfO2 is a high-k material that is used in semiconductor devices. Atomic-level control of material processing is required for the fabrication of thin films of high-k materials at nanoscale device sizes. Thermal atomic layer etching (ALE) of metal oxides, in which up to one monolayer of material can be removed, can be achieved by sequential self-limiting (SL) fluorination and ligand-exchange reactions at elevated temperatures. First-principles based atomic-level simulations using density functional theory (DFT) … Show more
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