Origin of conductivity and low-frequency noise in reverse-biased GaN p-n junction

Abstract

Simultaneous low-frequency noise characterization of gate and drain currents in AlGaN/GaN high electron mobility transistorsLow-frequency noise in AlGaN/GaN heterojunction field effect transistors on SiC and sapphire substrates

Minority carrier diffusion lengths and optical self‐absorption coefficient in undoped GaN

“…This value corresponds to the ionization energy of the generation level, which is attributed to the donor defect level introduced during the MOCVD growth. However, the high reverse dark current and the larger resistance observed in the device may be attributed to the density of dislocations remaining in the film [16,17]. Figure 3 illustrates the HRSEM of the as-grown GaN film.…”

Electrochemical potentiostatic activation for improvement of internal quantum efficiency of 385-nm ultraviolet light-emitting diodes

“…Since hydrogen can act as a mobile space charge, we can intuitively expect an improvement in the leakage current when the hydrogen concentration is reduced inside p-GaN. The mechanism of the reverse leakage current in a GaN-based p-n junction is explained with a carrier hopping model and multi-step tunneling model [28][29][30]. Hydrogen can act as a defect itself, or cure the defect by the passivation of dangling bonds.…”

Investigations on the nonidealities in Pd/n-GaN Schottky diodes grown by MOCVD

“…Several groups have suggested that defects in particular dislocations might play an important role in the device characteristics [3][4][5][6]. The presence of bulk non-uniformities of shallow and deep centers as revealed by various techniques is the primary reason for the nonideal performance in high electric fields.…”