Origin of asymmetric broadening of Raman peak profiles in Si nanocrystals

Gao, Yukun; Yin, Penggang

doi:10.1038/srep43602

Cited by 46 publications

(40 citation statements)

References 15 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…C of the SM [34]). This finding provides a new explanation for the asymmetric line shape of phonon spectra that has been widely reported in various condensed matter studies [39][40][41][42][43][44][45][46]. It is possible that more than one mechanisms are responsible for this phenomenon [42][43][44][45][46].…”

supporting

confidence: 71%

“…This finding provides a new explanation for the asymmetric line shape of phonon spectra that has been widely reported in various condensed matter studies [39][40][41][42][43][44][45][46]. It is possible that more than one mechanisms are responsible for this phenomenon [42][43][44][45][46]. That due to asymmetric interactions observed here should be more fundamental, as asymmetric interactions are general and ubiquitous in reality.…”

supporting

confidence: 71%

See 1 more Smart Citation

Universality of Energy Equipartition in One-dimensional Lattices

Fu,

Zhang,

Zhao

2018

Preprint

View full text Add to dashboard Cite

We show that a general one-dimensional (1D) lattice with nonlinear inter-particle interactions can always be thermalized for arbitrarily small nonlinearity in the thermodynamic limit, thus proving equipartition hypothesis in statistical physics for an important class of systems. Particularly, we find that in the lattices of interaction potential V (x) = x 2 /2+λx n /n with n ≥ 4, there is a universal scaling law for the thermalization time T eq , i.e., T eq ∝ λ −2 −(n−2) , where is the energy density. Numerical simulations confirm that it is accurate for an even n. A slight correction is needed for an odd n, which is due to the Chirikov overlap occurring in the weakly nonlinear regime between extra vibration modes excited by the asymmetry of potential. Based on this scaling law, as well as previous prediction for the case of n = 3, a universal formula for the thermalization time for a 1D lattice with a general interaction potential is obtained.

show abstract

supporting

confidence: 71%

supporting

confidence: 71%

Universality of Energy Equipartition in One-dimensional Lattices

Fu,

Zhang,

Zhao

2018

Preprint

View full text Add to dashboard Cite

show abstract

“…This effect is due to the different crystallite size, as observed previously for other nanocrystalline materials including TiO2 and silicon, and is consistent with the slightly smaller size of the doped ZnS NCs with respect to their undoped counterparts. 28,29 The other weak Raman peaks are ascribed to second order phonon modes with their intensity and position being consistent with previous literature reports. 30,31 No additional peaks were detected in the indium doped samples, further confirming the absence of impurity phases.…”

Section: Resultssupporting

confidence: 91%

Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

et al. 2019

View full text Add to dashboard Cite

show abstract

“…Figure 4a,c has asymmetry in the low-frequency tail that could correspond to near-surface bonds at the grain boundaries of SiNCs, which are strained as reported in the other research. [29,30] However, it seems that it is not enough for validating SiNCs' formation in the samples, and PL measurement also is necessary to confirm the Raman spectrum results.…”

Section: Raman Spectra and Nc Sizementioning

confidence: 99%

Photoluminescence and Stability of Sputtered SiO_x Layers

Hosseini-Saber

Muydinov

Ahmadi

et al. 2021

Physica Status Solidi (a)

View full text Add to dashboard Cite

Silicon (Si) is the most important semiconductor material used in photovoltaic, microelectronic, and photonic devices. It is an ideal platform for monolithic integrated optoelectronic systems because it is nontoxic and inexpensive compared to the widely used III-V semiconductors. [1][2][3] However, Si was considered to be an unsuitable material for effective light generation. Its indirect bandgap stipulates weak light emission resulting from optical or electrical excitation. In 1981, quantum confinement was observed in silicon nanocrystals. [4,5] This effect was interrelated with an energy shift of optical absorption. Furthermore, light emission from Si nanocrystals (SiNCs) and porous Si was achieved. [4] Subsequently, SiNCs have drawn significant attention. As a result of the Heisenberg principle, the electron momentum distribution becomes broadened when the particle size decreases to a nanometer scale, thus providing a way for quasi-direct electronic transitions. It results in effective light generation in SiNCs via photoluminescence (PL). [6] The recombination of electrons and holes in SiNCs causes a bright PL signal at room temperature. [7] Changing the size of nanocrystals allows tuning the energy of the PL maximum. [4,8] Among the parameters affecting light emission from SiNCs in SiO x layers are the following: the impact of oxygen and chemical degradation in the ambient atmosphere, defects in the SiO x layers, substrate effects. [9][10][11] In addition, light emission may originate also from the substrate by laser-induced nonbridging oxygen hole centers (NBOHCs). [12] Achievement of efficient and controllable light emission in SiNCs would drastically enhance the development and use of Si-based optoelectronic devices due to their compatibility with mature Si-based electrical circuits.Various methods have been proposed so far to produce SiNCs embedded in different layers, such as plasma-enhanced chemical vapor deposition (PECVD), [13][14][15] electron beam (e-beam) evaporation, [16,17] ion implantation, [18,19] and sputtering. [20][21][22] Depending on the material and plasma settings, sputtering can provide homogeneous amorphous or crystalline layers with settable density. Therefore, it is also widely used in the fabrication of semiconductor and optical coatings on an industrial scale. SiNCs can form in amorphous Si-containing, e.g., SiO x , layers using annealing, which can be conductive or radiative thermal ones. It is known that

show abstract

Origin of asymmetric broadening of Raman peak profiles in Si nanocrystals

Cited by 46 publications

References 15 publications

Universality of Energy Equipartition in One-dimensional Lattices

Universality of Energy Equipartition in One-dimensional Lattices

Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

Photoluminescence and Stability of Sputtered SiO_x Layers

Contact Info

Product

Resources

About

Origin of asymmetric broadening of Raman peak profiles in Si nanocrystals

Cited by 46 publications

References 15 publications

Universality of Energy Equipartition in One-dimensional Lattices

Universality of Energy Equipartition in One-dimensional Lattices

Augmented band gap tunability in indium-doped zinc sulfide nanocrystals

Photoluminescence and Stability of Sputtered SiOx Layers

Contact Info

Product

Resources

About

Photoluminescence and Stability of Sputtered SiO_x Layers