2009
DOI: 10.1103/physrevlett.102.017201
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Origin and Enhancement of Hole-Induced Ferromagnetism in First-Rowd0Semiconductors

Abstract: The origin of ferromagnetism in d;{0} semiconductors is studied using first-principles methods with ZnO as a prototype material. We show that the presence of spontaneous magnetization in nitrides and oxides with sufficient holes is an intrinsic property of these first-row d;{0} semiconductors and can be attributed to the localized nature of the 2p states of O and N. We find that acceptor doping, especially doping at the anion site, can enhance the ferromagnetism with much smaller threshold hole concentrations.… Show more

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Cited by 407 publications
(175 citation statements)
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“…To date, this magnetism is observed in a variety of materials with different sources of origin and is classified accordingly [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
See 1 more Smart Citation
“…To date, this magnetism is observed in a variety of materials with different sources of origin and is classified accordingly [11][12][13][14][15][16][17][18][19][20][21][22][23][24][25].…”
Section: Introductionmentioning
confidence: 99%
“…Moreover, oxygen vacancies associated with misfit stress at the film substrate interface in SnO 2 , CeO 2 , Al 2 O 3 , ZnO, MgO, and HfO 2 thin films are responsible for RTFM [16]. Vacancy mediated magnetism occurs in CuO [17] and ZnO [18,19]; oxygen vacancy induced magnetism in zinc peroxide [20] and CeO 2 [21]; and surface vacancy induced magnetism in NiO [22]. Thus, these studies reveal that defects in the form of vacancies are the source of this behavior [11][12][13][14][15][16][17][18][19][20][21][22], however, sustainability of this magnetism up to long-range order requires exigency of the mechanism of interaction among these sources.…”
Section: Introductionmentioning
confidence: 99%
“…By doping impurities with weaker electronegativity or lower valence into semiconductors of oxide or nitride, holes are introduced into the valence band of semiconductors, which leads to band magnetization. [13] As a nonmagnetic element, copper is often doped to many semiconductors to fabricate DMSs. Experimentally, RT ferromagnetism was reported in Cu doped ZnO, SnO 2 , and TiO 2 .…”
Section: Introductionmentioning
confidence: 99%
“…It has no magnetic transition-metal or rare-earth element present and is free of the issue of clustering of magnetic elements, which, however, has been quite often addressed for transition-metal doped semiconductors. Thus, an observed d 0 ferromagnetism could be intrinsic, and it is important both technologically and in the viewpoint of fundamental physics.Very recently, a group of density functional calculations [11][12][13][14][15][16][17][18][19][20] suggest that when N * …”
mentioning
confidence: 99%
“…Very recently, a group of density functional calculations [11][12][13][14][15][16][17][18][19][20] suggest that when N *…”
mentioning
confidence: 99%