2019
DOI: 10.1016/j.apcatb.2019.117853
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Orienting the charge transfer path of type-II heterojunction for photocatalytic hydrogen evolution

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Cited by 77 publications
(22 citation statements)
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“…Given the formed II‐type heterojunction at the interface, the electrons in CB of CdZnS can rapidly move to the CB of In 2 O 3 , while the holes transfer from the VB of In 2 O 3 to the VB of CdZnS. [ 68–71 ] Subsequently, the photogenerated electrons concentrated in the CB of In 2 O 3 would react with H + in the water to produce H 2 , and the holes concentrated in the VB of CdZnS would be captured by sacrificial reagent. Accordingly, the combination of In 2 O 3 and CdZnS could effectively accelerate the transportation of photoexcited electrons and holes in space, and thus more electrons can take part in the photocatalytic H 2 productions process.…”
Section: Resultsmentioning
confidence: 99%
“…Given the formed II‐type heterojunction at the interface, the electrons in CB of CdZnS can rapidly move to the CB of In 2 O 3 , while the holes transfer from the VB of In 2 O 3 to the VB of CdZnS. [ 68–71 ] Subsequently, the photogenerated electrons concentrated in the CB of In 2 O 3 would react with H + in the water to produce H 2 , and the holes concentrated in the VB of CdZnS would be captured by sacrificial reagent. Accordingly, the combination of In 2 O 3 and CdZnS could effectively accelerate the transportation of photoexcited electrons and holes in space, and thus more electrons can take part in the photocatalytic H 2 productions process.…”
Section: Resultsmentioning
confidence: 99%
“…The size of the arc radius on the EIS Nyquist diagram can reflect the separation and mobility of electrons on the electrode surface. Studies have shown that the smaller the radius of the arc, the smaller the resistance of the interface charge transfer. Figure c shows the EIS spectra of the three samples. Among them, the radius of the arc of the 20% CuMOF/CdS composite sample is significantly smaller than that of CdS, which indicates that the 20% CuMOF/CdS composite sample receives less resistance during the carrier-transfer process.…”
Section: Resultsmentioning
confidence: 99%
“…[120,121] According to the previously reported works, type-II heterojunction is regarded as the most promising architecture to improve the carrier separation performance in the semiconductor system. [122] As the conduction and valence band positions of semiconductor B are both higher than those of semiconductor A (Figure 7b), [123,124] the thermodynamic driving force brought by the heterojunction built-in electric field will make the photogenerated electrons from the conduction band of semiconductor B spontaneously transport to the conduction band of semiconductor A, and photogenerated holes from the valence band of semiconductor A will on the contrary transport to the valence band of semiconductor B, thus resulting in the enhanced carrier separation process. [125,126] Type-III heterojunction is similar to type-II heterojunction, but the band structure will be further offset (Figure 7c).…”
Section: Heterojunction Engineeringmentioning
confidence: 99%