Oriented nucleation and growth of diamond films on β-SiC and Si

Kohl, R.; Wild, C.; Herres, N.; Koidl, P.; Stoner, Brian R.; Glass, J. T.

doi:10.1063/1.110664

Cited by 80 publications

(15 citation statements)

References 5 publications

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“…6 This process is probably not critical as it typically involves lower ion energies, Ϸ10 eV, 16 than seen here.…”

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confidence: 94%

“…[3][4][5][6] The mechanism of the bias enhanced nucleation is contentious. [5][6][7][8][9][10][11][12] The low nucleation density of diamond on Si may arise from the high surface energy of diamond, the large lattice mismatch of diamond and Si, or the low sticking probability or low surface mobility of growth species. Diamond growth is often preceded by a thin layer of noncrystalline C. 13,14 An interfacial layer of SiC is also often seen on Si.…”

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confidence: 99%

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Mechanism of bias-enhanced nucleation of diamond on Si

Robertson

Gerber

Sattel

et al. 1995

Applied Physics Letters

124

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“…6 This process is probably not critical as it typically involves lower ion energies, Ϸ10 eV, 16 than seen here.…”

mentioning

confidence: 94%

mentioning

confidence: 99%

Mechanism of bias-enhanced nucleation of diamond on Si

Robertson

Gerber

Sattel

et al. 1995

Applied Physics Letters

124

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“…Various studies on oriented diamond films have been done using scanning and transmission electron microscopy ͑SEM͒, ͑TEM͒, 3,4 x-ray photoelectron spectroscopy ͑XPS͒, 5 or x-ray diffraction ͑XRD͒. 6,7 While most diagnostic techniques are sensitive to m thick films only, TEM was used to reveal the structure of the silicon-diamond interface. 4 Nevertheless, there is a lack of diagnostic tools to investigate the interface in order to understand oriented growth.…”

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confidence: 99%

X-ray photoelectron diffraction of (100)-oriented chemical vapor deposited diamond films on silicon (100)

Schaller

Küttel

Aebi

1995

Applied Physics Letters

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͑100͒-oriented diamond films have been grown on silicon ͑100͒ in a microwave plasma assisted chemical vapor deposition ͑CVD͒ tubular system. X-ray photoelectron diffraction ͑XPD͒ has been used to study such oriented polycrystalline films. Comparing the diffractograms of a natural diamond ͑100͒ surface and of polycrystalline ͑100͒-oriented CVD diamond films quite similar features are observed. XPD measurements after 8 min of bias treatment show that the tiny crystals are already preferentially oriented at deposition parameters required for ͑100͒-oriented film growth. Our measurements indicate a strong need to control the growth parameters very carefully during the first minutes of growth to get an orientation.Presently, polycrystalline chemical vapor deposition ͑CVD͒ diamond films oriented toward the substrate are routinely grown on silicon 1 using microwave plasma enhanced deposition. No single-crystal thin films have so far been deposited on nondiamond substrates. However, true heteroepitaxy remains as a goal for further research activities due to the expected performance of such films in electronic applications. 2 In a first step, it is important to understand the physical and chemical mechanisms which are responsible for the oriented growth on silicon. Various studies on oriented diamond films have been done using scanning and transmission electron microscopy ͑SEM͒, ͑TEM͒, 3,4 x-ray photoelectron spectroscopy ͑XPS͒, 5 or x-ray diffraction ͑XRD͒. 6,7 While most diagnostic techniques are sensitive to m thick films only, TEM was used to reveal the structure of the silicon-diamond interface. 4 Nevertheless, there is a lack of diagnostic tools to investigate the interface in order to understand oriented growth. Moreover, it is not clear whether orientation already occurs during the first minutes of bias treatment or later during the deposition process.In this letter, we report on x-ray induced photoelectron diffraction measurements for the characterization of the very early stage of oriented diamond growth on silicon ͑100͒. This technique was used to study diamond films after 8 min of bias treatment.Low pressure diamond growth was performed on silicon ͑100͒ substrates via microwave plasma CVD in a tubular deposition system. Silicon substrates were cleaned in acetone, introduced in the plasma system, and the deposition was started after the pressure in the chamber reached 10 Ϫ6 mbar. A first run during 3 min in pure hydrogen was used to remove the native oxide layer on the substrate and to adjust the deposition temperature. Nucleation was induced by applying a dc bias of Ϫ225 V to the substrate during 8 min at 810°C and under 20 mbar of a 2% CH 4 /H 2 gas mixture. The parameters for the subsequent deposition were 870°C at 40 mbar with 1% CH 4 in H 2 . High purity hydrogen was used ͑6.0 H 2 ͒. Figure 1 shows a 15 h deposited polycrystalline CVD diamond film with 80% of ͑100͒ oriented crystals. The tilting angle is less than 8°as measured by XRD.XPD is a well-established technique in surface science for studying surf...

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“…[3][4][5][6][7][8][9] In the island growth stage of diamond during or just after the bias enhanced nucleation ͑BEN͒, 10 the distribution of orientation of diamond particles is about 10°on ␤-SiC. 5,7 By introducing the selective growth of the ͓001͔ direction, 11,12 where nonoriented particles have been selected out, the distribution of orientation has been reduced to be less than 1.0°.…”

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confidence: 99%