Oriented Growth of Single‐Crystalline Bi 2 S 3 Nanowire Arrays

Journal of Applied Physics

Viter

Abay

et al. 2016

Self Cite

Original citationKunakova, G.; Viter, R.; Abay, S.; Biswas, S.; Holmes, J. D.; Bauch, T. We report on the charge transport properties of individual Bi 2 S 3 nanowires grown within the pores of anodized aluminum oxide templates. The mean pore diameter was 80 nm. Space charge limited current is the dominating conduction mechanism at temperatures below 160 K. Characteristic parameters of nanowires, such as trap concentration and trap characteristic energy, were estimated from current-voltage characteristics at several temperatures. V C 2016 AIP Publishing LLC.

Section: Methodsmentioning

confidence: 99%

Space charge limited current mechanism in Bi2S3 nanowires

Journal of Applied Physics

Viter

Abay

et al. 2016

Self Cite

“…Detailed growth of the Bi 2 S 3 nanowire arrays and compositional characterization is described elsewhere [19]. Mechanical polishing of both sides of AAO membrane was done to remove bulk crystallites formed during the synthesis.…”

Section: Methodsmentioning

confidence: 99%

Relative Humidity Dependent Resistance Switching of Bi₂S₃Nanowires

Meija

Journal of Nanomaterials

Prikulis

et al. 2017

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Electrical properties of Bi 2 S 3 nanowires grown using a single source precursor in anodic aluminum oxide templates are sensitive to the relative humidity in an inert gas environment. Dynamic sensing dependency is obtained and shows presence of spontaneous resistance switching effect between low and high relative humidity states. Employing the thermionic field emission theory, heights of Schottky barriers are estimated from the current-voltage characteristics and in relation to the humidity response. The change of Schottky barrier height is explained by local changes in physically adsorbed water molecules on the surface of the nanowire.

“…Highly-oriented single crystal Bi2S3 nanowires were synthesized inside the pores of AAO membranes using a solventless approach as previously described by Xu et al 21 . The nominal diameter of the AAO pores was 200 nm.…”

Section: A Synthesismentioning

confidence: 99%

Photoconductive properties of Bi2S3 nanowires

Andzane

Journal of Applied Physics

Varghese

et al. 2015

The photoconductive properties of Bi2S3 nanowires synthesized inside anodized alumina (AAO) membrane have been characterized as a function of illuminating photon energy between the wavelengths of 500 to 900 nm and at constant illumination intensity of 1–4 μW·cm−2. Photoconductivity spectra, photocurrent values, photocurrent onset/decay times of individual Bi2S3 nanowires liberated from the AAO membrane were determined and compared with those of arrays of as-produced Bi2S3 nanowires templated inside pores of AAO membrane. The alumina membrane was found to significantly influence the photoconductive properties of the AAO-hosted Bi2S3 nanowires, when compared to liberated from the AAO membrane individual Bi2S3 nanowires, possibly due to charge carrier trapping at the interface between the nanowire surface and the pore walls