Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

Chen, Lingxiu; Li, He; Wang, Hui Shan; Wang, Haomin; Tang, Shujie; Cong, Chunxiao; Xie, Hui; Li, Lei; Xia, Hui; Li, Tianxin; Wu, Tianru; Zhang, Daoli; Deng, Lianwen; Yu, Ting; Xie, Xiaoming; Jiang, Mianheng

doi:10.1038/ncomms14703

Cited by 124 publications

(83 citation statements)

References 35 publications

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“…Extensive research has shown the outstanding performance of multilayer h-BN as a substrate in electronic devices made from 2D materials 1,4 . Therefore, the fabrication of high-quality h-BN over a large area provides promise for its application in 2D electronics and optoelectronics [6][7][8][9] .…”

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confidence: 99%

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Shi

Wang

et al. 2020

Nat Commun

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Multilayer hexagonal boron nitride (h-BN) is highly desirable as a dielectric substrate for the fabrication of two-dimensional (2D) electronic and optoelectronic devices. However, the controllable synthesis of multilayer h-BN in large areas is still limited in terms of crystallinity, thickness and stacking order. Here, we report a vapor-liquid-solid growth (VLSG) method to achieve uniform multilayer h-BN by using a molten Fe 82 B 18 alloy and N 2 as reactants. Liquid Fe 82 B 18 not only supplies boron but also continuously dissociates nitrogen atoms from the N 2 vapor to support direct h-BN growth on a sapphire substrate; therefore, the VLSG method delivers high-quality h-BN multilayers with a controllable thickness. Further investigation of the phase evolution of the Fe-B-N system reveals that isothermal segregation dominates the growth of the h-BN. The approach herein demonstrates the feasibility for large-area fabrication of van der Waals 2D materials and heterostructures.

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confidence: 99%

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Shi

Wang

et al. 2020

Nat Commun

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“…However, these ribbons had rough edges which limit carrier transport and thus the usability of the GNRs in devices. 6,7 Epitaxially grown GNRs on SiC show ballistic transport 8 , and GNRs were prepared inside etched trenches in hexagonal boron nitride (hBN) 9 , but both methods again lack atomic precision. Advances in solution chemistry opened up new routes to obtain GNRs by atomically precise bottom-up synthesis.…”

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confidence: 99%

Graphene nanoribbons on hexagonal boron nitride: Deposition and transport characterization

Preis

Kick

Lex

et al. 2019

Applied Physics Letters

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Chemically synthesized "cove"-type graphene nanoribbons (cGNRs) of different widths were brought into dispersion and drop-cast onto exfoliated hexagonal boron nitride (hBN) on a Si/SiO 2 chip. With AFM we observed that the cGNRs form ordered domains aligned along the crystallographic axes of the hBN. Using electron beam lithography and metallization, we contacted the cGNRs with NiCr/Au, or Pd contacts and measured their I-V -characteristics. The transport through the ribbons was dominated by the Schottky behavior of the contacts between the metal and the ribbon.

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“…Otherwise, if the AR probability changes a little in the whole energy interval, then it is difficult to draw the key mechanism for the AR suppression. For experimental realization of our proposal, we note that the state of the art of the graphene engineering strongly shows the potential to construct the BPC valley filter in the near future [51][52][53][54][55][56], and recent progress on specular AR in graphene has also confirmed the superconducting proximity effect in graphene [57]. Therefore, it is reasonable to anticipate the realization of our proposal.…”

Section: Numerical Simulationmentioning

confidence: 99%

“…This can be denoted by b L = Ra L , where the final reflection matrix R can be obtained by combining s 1 and s 2 , resulting in [56] …”

Section: Scattering Matrix Analysis Of Andreev Reflectionmentioning

confidence: 99%

Probing the valley filtering effect by Andreev reflection in a zigzag graphene nanoribbon with a ballistic point contact

2017

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Ballistic point contact (BPC) with zigzag edges in graphene is a main candidate of a valley filter, in which the polarization of the valley degree of freedom can be selected by using a local gate voltage. Here, we propose to detect the valley filtering effect by Andreev reflection. Because electrons in the lowest conduction band and the highest valence band of the BPC possess opposite chirality, the inter-band Andreev reflection is strongly suppressed, after multiple scattering and interference. We draw this conclusion by both the scattering matrix analysis and the numerical simulation. The Andreev reflection as a function of the incident energy of electrons and the local gate voltage at the BPC is obtained, by which the parameter region for a perfect valley filter and the direction of valley polarization can be determined. The Andreev reflection exhibits an oscillatory decay with the length of the BPC, indicating a negative correlation to valley polarization.

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Oriented graphene nanoribbons embedded in hexagonal boron nitride trenches

Cited by 124 publications

References 35 publications

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Vapor–liquid–solid growth of large-area multilayer hexagonal boron nitride on dielectric substrates

Graphene nanoribbons on hexagonal boron nitride: Deposition and transport characterization

Probing the valley filtering effect by Andreev reflection in a zigzag graphene nanoribbon with a ballistic point contact

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