2012
DOI: 10.1364/ome.2.001809
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Oriented creation of anisotropic defects by IR femtosecond laser scanning in silica

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Cited by 15 publications
(16 citation statements)
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“…Electrons relax first into self‐trapped excitons (STE) by electron–phonon coupling (this takes a few 10s ps) and then annihilate radiatively (lifetime of nanoseconds at room temperature) or not (coupling with lattice phonons), or transform into point defects (e.g. into SiE’ and NBOHC (bond breaking) and then into a silicium oxygen deficient center SiODC(II)) following the reaction scheme sketched below: …”
Section: Discussionmentioning
confidence: 99%
See 1 more Smart Citation
“…Electrons relax first into self‐trapped excitons (STE) by electron–phonon coupling (this takes a few 10s ps) and then annihilate radiatively (lifetime of nanoseconds at room temperature) or not (coupling with lattice phonons), or transform into point defects (e.g. into SiE’ and NBOHC (bond breaking) and then into a silicium oxygen deficient center SiODC(II)) following the reaction scheme sketched below: …”
Section: Discussionmentioning
confidence: 99%
“…We hypothesize that point defects, even if they are not the most efficient relaxation pathway are good candidates for recording medium . Finally, decomposition of silica leads to SiODC(II) defect formation , which may behave as electron source for the ionization induced by the next pulse. Therefore, in the process of multiphoton ionization, these centers with an occupied level in the forbidden gap are expected to be readily ionized first, contributing to plasma nanostructure formation.…”
Section: Discussionmentioning
confidence: 99%
“…The quill writing effect depends strongly on the focus depth of the laser irradiation beneath the sample surface and the scanning speed [352,436]. Scanning direction also affects the etching rate of the inscribed lines and luminescence of the femtosecond laser induced color centers [440,441].…”
Section: Quill Writing Anisotropic Photosensitivity and Their Mechanmentioning
confidence: 99%
“…Additionally, two intense absorption bands can be distinguished at short wavelengths, which are attributed to SiE' centers at 210 nm (≡Si, an unpaired electron in a silicon atom bound to three oxygen atoms), and oxygen deficiency center (ODC)(II) at 245 nm, (-O-Si-O-, a divalent silicon atom) [27,28]. A detailed description of their formation mechanism is given in [29].…”
Section: Loss and Birefringence Dispersionmentioning
confidence: 99%