Orientational effects in the growth of gallium arsenide layers in the gallium arsenide-zinc chloride system

Lavrent'eva, L. G.; Nesteryuk, L. G.; Sennikova, V. M.

doi:10.1007/bf00912229

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1999

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“…Thus the studies which were done have shown that in contrast to the known formation mechanisms of transition layers in autoepitaxial growth [4,5] for heteroepitaxy the formation process of the transition region consists of three basically different steps. The determining one is the first -the step of nuclei formation with a strongly nonequilibrium boundary.…”

Section: Resultsmentioning

confidence: 98%

“…The determining one is the first -the step of nuclei formation with a strongly nonequilibrium boundary. Note that in autoepitaxy the system of nucleation steps either does not exert any special effect on the formation of the film-substrate boundary or in general is not seen [4,5]. The pronounced influence of this step during heteroepitaxial deposition of material necessarily determines the nature of the following steps.…”

Section: Resultsmentioning

confidence: 99%

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