Orientation of Electron Spins in Semiconductors

Dyakonov, Michel; Zakharchenya, B. P.; Perel, V. I.; Safarov, S I; Fleisher, V.G.

doi:10.3367/ufnr.0105.197112ab.0772

Cited by 15 publications

(20 citation statements)

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“…On the other hand, the temperature independence of t SO is consistent with the D'yakonov-Perel mechanism of spin relaxation in a degenerate electron gas [20]. When t SO is less than t i , the SO interaction is dominant in the electron scattering processes, consequently the WAL behavior appears clearly.…”

Section: Article In Presssupporting

confidence: 55%

Quantum transport and spin–orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

Nishizako¹,

Manago²,

Ishida³

et al. 2009

Journal of Crystal Growth

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Section: Article In Presssupporting

confidence: 55%

Quantum transport and spin–orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

Nishizako¹,

Manago²,

Ishida³

et al. 2009

Journal of Crystal Growth

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“…b). Such behavior is characteristic for the Dyakonov–Perel spin relaxation mechanism , which predicts for QWs:

1 / τ_{s} \propto T τ_{p} false(T false)

. Here

τ_{s}

is the electron spin relaxation time, which can be compared in our case with

T_{2, normale}^{*}

, and

τ_{p}

is the electron momentum relaxation time.…”

Section: Resultsmentioning

confidence: 76%

Spin coherence of electrons and holes in ZnSe‐based quantum wells studied by pump–probe Kerr rotation

Zhukov

Yakovlev

Schwan

et al. 2014

Physica Status Solidi (b)

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Spin coherence of resident electrons and holes is measured in ZnSe‐based quantum wells by means of time‐resolved Kerr rotation technique. At a temperature of 1.8 K spin dephasing time for localized electrons can be as long as 33 ns, and for holes of 0.8 ns. Electron spin precession is clearly observed in a wide temperature range up to 230 K. The electron spin dephasing becomes much shorter of 0.2 ns for the quantum well with a high‐density electron gas. Using vector magnet all components of the g‐factors tensor are evaluated for the electrons and heavy‐holes, revealing strong anisotropy for the heavy‐holes.

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“…A well-known dephasing mechanism was suggested in Ref. 24, with electron spin dephasing by the nuclear spin polarization occurring as a result of hopping of the electron from one donor site to another. In this work, we establish that nuclear spins contribute to localized electron spin dephasing even in crystals with sparsely positioned donors, where such hopping is not possible.…”

Section: Introductionmentioning

confidence: 99%

Relaxation of Shallow Donor Electron Spin Due to Interaction with Nuclear Spin Bath

Saykin

Privman

2002

Nano Lett.

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We study the low-temperature dynamics of a shallow donor, e.g., 31 P, impurity electron spin in silicon, interacting with the bath of nuclear spins of the 29 Si isotope. For small applied magnetic fields, the electron spin relaxation is controlled by the steady state distribution of the nuclear spins. We calculate the relaxation times 1 T and 2 T as functions of the external magnetic field, and conclude that nuclear spins play an important role in the donor electron spin decoherence in Si:P at low magnetic fields.

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Orientation of Electron Spins in Semiconductors

Cited by 15 publications

References 0 publications

Quantum transport and spin–orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

Quantum transport and spin–orbit interaction in Al0.1In0.9Sb/InAs0.1Sb0.9 quantum wells

Spin coherence of electrons and holes in ZnSe‐based quantum wells studied by pump–probe Kerr rotation

Relaxation of Shallow Donor Electron Spin Due to Interaction with Nuclear Spin Bath

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