Orientation distribution-Lotgering factor relationship in a polycrystalline material-as an example of bismuth titanate prepared by a magnetic field

Furushima, Ryoichi; Tanaka, Satoshi; Kato, Zenji; Uematsu, Keizo

doi:10.2109/jcersj2.118.921

Cited by 91 publications

(35 citation statements)

References 29 publications

(10 reference statements)

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“…57 In addition to texture, information about the size of the crystallites can be obtained from the XRD peak widths, which is useful since crystallite size is known to play a signicant role in determining the electrical properties of polycrystalline lms. Using the Scherer formula, the crystallite size can be calculated as:…”

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confidence: 99%

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

et al. 2015

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ZnO is an increasingly important wide bandgap semiconductor for optoelectronic applications. Solution processing provides a facile and inexpensive method to form ZnO thin films with high throughput. The sol stabilizer used in the solution processing of ZnO functions variously as a sol homogenizer, chelating agent, wettability improver and capping agent. In spite of its obvious importance in influencing ZnO film properties, a restricted set of short chain alkaline sol stabilizers have been used in prior reports. We examined the effect of six different sol stabilizers, including acidic and longer chain species, along with a recipe without any stabilizer, on the grain size, crystallographic texture, and resistivity of solution processed ZnO films on thermal oxide-coated silicon substrates, and found large variations in the structural and electrical properties as a consequence of the choice of sol stabilizer. We found that ZnO films formed using oleic acid as the sol stabilizer possessed a strong (002) preferred orientation with a Lotgering factor as high as 0.86. The key insight we obtained is that the sol stabilizer strongly influences the film surface area and activation energy barrier for inter-grain transport. We comprehensively studied the steady state and transient behavior of ZnO films deposited using different stabilizers and compared their lifetime and mobility-lifetime products. When exposed to illumination, the conductivity of the deposited films increased by several orders of magnitude. This is attributed to the trapping of the nonequilibrium holes by the surface adsorbed oxide species, which produces equivalent number of excess electrons in the conduction band. Impedance spectroscopy and C-V measurements were performed to calculate the doping of the ZnO thin films. ZnO thin film transistors were also fabricated and the effects of the sol stabilizer on the different parameters of the TFT like mobility and threshold voltage were investigated.

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confidence: 99%

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

et al. 2015

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“…15 Since ferroelectric polarization is influenced by the degree of orientation and texture of Aurivillius phase films, the degree of orientation for the B6TFO films is expressed in terms of Lotgering factor. 27 The Lotgering factor (L f ) measured for the B6TFO thin film annealed at 850 0 C was 0.962, confirming that the B6TFO thin film is preferably oriented along the out-of-plane c-axis (c-plane) and textured 27,28 although full texture was not obtained (L f <1) as observed by the (1111) and (026) reflections. Figure 2 represents a cross-section HR-TEM micrograph of a B6TFO thin film annealed at 850 • C. TEM analysis reveals that the B6TFO thin film has a clear n = 5 layered Aurivillius structure with uniformly distributed perovskite units over the sample.…”

Section: A Crystallographic Propertiesmentioning

confidence: 86%

“…XRD data was used to investigate the degree of orientation of B6TFO thin films by calculating the Lotgering factor (LF) by comparing the ratios of peaks along the preferred orientation to summation of all diffracted intensities peak and using theoretical (hkl) intensities obtained from the Crystallographica software. [26][27][28] …”

Section: Methodsmentioning

confidence: 99%

A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

et al. 2015

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The ability to control the growth, texture and orientation of self-nanostructured lead-free Aurivillius phase thin films can in principle, greatly improve their ferroelectric properties, since in these materials the polarization direction is dependent on crystallite orientation. Here, we report the growth of c-plane oriented Bi6Ti3Fe2O18 (B6TFO) functional oxide Aurivillius phase thin films on c-plane sapphire substrates by liquid injection chemical vapour deposition (LI-CVD). Microstructural analysis reveals that B6TFO thin films annealed at 850°C are highly crystalline, well textured (Lotgering factor of 0.962) and single phase. Typical Aurivillius plate-like morphology with an average film thickness of 110nm and roughness 24nm was observed. The potential of B6TFO for use as a material in lead-free piezoelectric and ferroelectric data storage applications was explored by investigating local electromechanical (piezoelectric) and ferroelectric properties at the nano-scale. Vertical and lateral piezoresponse force microscopy (PFM) reveals stronger in-plane polarization due to the controlled growth of the a-axis oriented grains lying in the plane of the B6TFO films. Switching spectroscopy PFM (SS-PFM) hysteresis loops obtained at higher temperatures (up to 200°C) and at room temperature reveal a clear ferroelectric signature with only minor changes in piezoresponse observed with increasing temperature. Ferroelectric domain patterns were written at 200°C using PFM lithography. Hysteresis loops generated inside the poled regions at room and higher temperatures show a significant increase in piezoresponse due to alignment of the c-axis polarization components under the external electric field. No observable change in written domain patterns was observed after 20hrs of PFM scanning at 200°C, confirming that B6TFO retains polarization over this finite period of time. These studies demonstrate the potential of B6TFO thin films for use in piezoelectric applications at elevated temperatures and for use in non-volatile ferroelectric memory applications.

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“…p 0 is p of a material with a random particle distribution [22]. Using the above calculation, LF value is 0.31.…”

Section: Structure Of Magnetically Oriented Filmmentioning

confidence: 97%

Preparation and characterization of magnetic films of well-dispersed single domain of core–shell α″-Fe16N2/Al2O3 nanoparticles

Suhendi

Kartikowati

Zulhijah

et al. 2015

Advanced Powder Technology

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Orientation distribution-Lotgering factor relationship in a polycrystalline material-as an example of bismuth titanate prepared by a magnetic field

Cited by 91 publications

References 29 publications

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

Effect of sol stabilizer on the structure and electronic properties of solution-processed ZnO thin films

A study of the temperature dependence of the local ferroelectric properties of c-axis oriented Bi6Ti3Fe2O18 Aurivillius phase thin films: Illustrating the potential of a novel lead-free perovskite material for high density memory applications

Preparation and characterization of magnetic films of well-dispersed single domain of core–shell α″-Fe16N2/Al2O3 nanoparticles

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