Orientation Dependent Dielectric Characteristics of Nanocrystalline Pb(Zr_xTi_1-x)O₃Films with Inter Digital Electrodes

Abstract

Crystal structure and dielectric properties of nanocrystalline Pb(Zr x Ti 1-x )O 3 films were studied. Intensity of Raman mode E(1LO) was increased and peak around ∼580 cm −1 became symmetric and strong (110) crystal plane reflection was observed as the thickness of the films increased from 150 nm to 500 nm. Curie-temperature was found to decrease from ∼370 • C to ∼345 • C as the orientation changed from tetragonal to trigonal. Dielectric constant was found to be maximized and loss angle minimized for single phase oriented films, while phase co-existence was found to increase loss angle values, and bimodal dielectric maxima were found.

Dielectric and Tunability Properties of Nanostructured Nd-modified Pb(ZrxTi1-x)O3Thin Films up to Microwave Frequencies

“…Dielectric maximum around ∼420 • C also moved towards higher temperatures with frequency from 100 Hz to 10 kHz. Same kind of relaxor-type dependence was also found in our previous studies on nanocrystalline PNZT films [12], as well as on highly oriented BaTiO 3 [13], and in (Pb 0.5 Ba 0.5 )ZrO 3 thin films studied by Hao et al [14]. The 150-nm-film, for comparison, showed typical diffusive phase transition with one dielectric relaxation maximum around ∼390 • C, and the transition of the 50-nm-film was already strongly suppressed due to high residual compressive stress state.…”