Orientation dependent amphoteric behavior of group IV impurities in the molecular beam epitaxial and vapor phase epitaxial growth of GaAs

Lee, B.; Bose, Sukanta; Kim, M.H.; Reed, Andrew Dean; Stillman, G. E.; Wang, W.I.; Viña, L.; Colter, P. C.

doi:10.1016/0022-0248(89)90272-8

Cited by 52 publications

(13 citation statements)

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“…By now the highest level of purity of epitaxial layers achieved in the world corresponds to a total concentration of N D -N A ≤ 10 12 cm -3 [1][2][3]. However, in view of the low impurity concentration and wide depletion regions electrical characterization in such material is either extremely difficult or impossible.…”

mentioning

confidence: 99%

Optical characterization of ultra‐pure GaAs

Zhilyaev¹,

Полетаев

Botnaryuk

et al. 2003

phys. stat. sol. (c)

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The problem of ultra-pure thick GaAs layers has been important for a long time. Growth of such material is an important technological problem and the basis of application in electronic devices. Epitaxial (100 -1000) µm thick GaAs layers were grown by vapour phase epitaxy in a chloride system (HVPE) on N + and semi insulating 2″ substrates horizontally; the growth zone extended over ∼19 cm with a temperature gradient of ∼3 °C/cm. The total impurity concentration N was in the range ≤ 10 12-10 14 cm -3. These epilayers have been investigated using low temperature photoluminescence (LTPL), C -V, and Hall measurements. However, estimation of the electro-physical parameters of ultra-pure (N ≤ 10 12 cm -3 ) GaAs often causes difficulties. Because of the low concentration of impurities (N ≤ 10 12 cm -3) electro-physical measurements are difficult in many cases or even impossible. In those cases where electro-physical measurements proved feasible a direct relationship was established between the variation of the electrophysical parameters and the evolution of the LTPL spectra at 2 K. By extrapolating the obtained data to regions of lower impurity concentration, N D and µ e values corresponding to certain values of the parameters of the LTPL spectra could be found. Thus, analysis of the LTPL spectra can yield estimates of N D and µ e when direct determination is difficult or impossible. We consider that from a detailed analysis of LTPL spectra at 2 K the concentration of deep levels in ultra-pure GaAs can be determined.

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mentioning

confidence: 99%

Optical characterization of ultra‐pure GaAs

Zhilyaev¹,

Полетаев

Botnaryuk

et al. 2003

phys. stat. sol. (c)

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“…Thus, a fixed charge in the GaAs layer, which originates from residual impurities or surface state in MBE growth, 17,18) plays a significant role. The Coulomb force F C is generated by an oscillating voltage V act applied from the probe.…”

Section: Methodsmentioning

confidence: 99%

Direct Actuation of GaAs Membrane with the Microprobe of Scanning Probe Microscopy

Tamaru

Nonaka

Nagase

et al. 2009

jjap

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A method for evaluating the dynamic characteristics of micro-and nanoresonators with high spatial resolution is proposed. The mechanical resonance of circular micromembrane resonators is directly induced by voltage applied from the microprobe of a scanning probe microscopy (SPM) system. The vibration amplitude is simultaneously detected as height information by SPM. Experimentally, the resonant properties of fundamental and higher-order modes of 200-nm-thick GaAs micromembranes were measured. The frequency of the highest mode is 3.4 MHz and its resonant amplitude is about 1 nm. The resonant amplitude increases with increasing actuation voltage in a linear manner at voltages below 180 mV. Large actuation voltage induces nonlinear vibration with the spring soften effect, which originates from the strong attractive force induced by the electronic field between the probe and membrane. The high tapping force, which is repulsive, induces another type of nonlinear vibration caused by the spring harden effect. The simultaneous actuation and detection for mechanical resonators based on SPM technology reveals the characteristics of the mechanical interaction force between the micromembrane and microprobe. #

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“…The p-type dopants for GaAs are Ge [100] and C [101] and for InP the p-type dopants are Be [102], and Zn [103]. Tellurium (Te) [104] have been used as an n-type impurity in InAs semiconductor.…”

Section: Doping Issues In Iii-v Semiconductorsmentioning

confidence: 99%