2013
DOI: 10.1063/1.4821030
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Orientation dependence of piezoelectric properties and mechanical quality factors of 0.27Pb(In1/2Nb1/2)O3-0.46Pb(Mg1/3Nb2/3)O3-0.27PbTiO3:Mn single crystals

Abstract: The complete set of material constants of single domain rhombohedral phase 0.27Pb(In1/2Nb1/2)O3-0.46Pb(Mg1/3Nb2/3)O3-0.27PbTiO3:Mn single crystal has been determined. The orientation dependence of piezoelectric, dielectric, and electromechanical properties was calculated based on these single domain data. The maximum piezoelectric and electromechanical properties were found to exist near the [001]C pseudo-cubic direction. In addition, the piezoelectric properties of [001]C poled crystals with “4R” multi-domain… Show more

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Cited by 71 publications
(34 citation statements)
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“…Such bias field was also reported in the Mn modified PMN-PZT and Mn modified PIN-PMN-PT single crystal. 9,17,18 The low dielectric loss, low leakage current and the existence of internal bias are thought to related to the Mn dopant, which behaves as acceptor dopant and generate oxygen vacancies, resulting in acceptor-oxygen vacancy defect dipoles. These defect dipoles realign themselves during the poling process along the preferential direction of the spontaneous polarization and give rise to the internal bias, which clamps the domain wall motions and accounts for the low dielectric loss and leakage current.…”
Section: Resultsmentioning
confidence: 99%
“…Such bias field was also reported in the Mn modified PMN-PZT and Mn modified PIN-PMN-PT single crystal. 9,17,18 The low dielectric loss, low leakage current and the existence of internal bias are thought to related to the Mn dopant, which behaves as acceptor dopant and generate oxygen vacancies, resulting in acceptor-oxygen vacancy defect dipoles. These defect dipoles realign themselves during the poling process along the preferential direction of the spontaneous polarization and give rise to the internal bias, which clamps the domain wall motions and accounts for the low dielectric loss and leakage current.…”
Section: Resultsmentioning
confidence: 99%
“…Mn substitution resulted in enhanced mechanical quality factor Q m and a moderate increment in the rhombohedral to tetragonal phase transition temperature with increasing Mn composition [267]. The mechanical quality factor Q m ~1000 of Mn doped PIN-PMN-PT single crystals was reported recently, which is comparable to “hard” PZT8 ceramics [268,269,270]. In Mn-doped PZN-PT single crystals, the improved Q m was due to the induction of “hard” characteristics into the single crystal [271].…”
Section: Growth Of Relaxor-based Ferroelectric Single Crystalsmentioning
confidence: 96%
“…As shown in Fig. 19, the modified crystal systems exhibit different levels of Q m , in the range of 70–2000, while maintaining ultrahigh electromechanical coupling on the order of >0.85, demonstrating the 3 rd generation relaxor-PT crystals to be unique piezoelectrics and potential materials for high power electromechanical applications [273,296,304,336, 357,358,426,427]. …”
Section: Figure Of Merits (Fom) Of Piezoelectric Materials For Vmentioning
confidence: 99%