Orientation competition growth and mechanism of SrTiO3 film on CeO2 layer

Ye, Jiachao; Mou, Shaojing; Zhu, Rongji; Liu, Linfei; Li, Yijie

doi:10.1016/j.vacuum.2021.110626

Cited by 7 publications

(2 citation statements)

References 121 publications

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“…As depicted in Figure 1, the metal substrates used in this study are Hastelloy C276 tapes covered with multiple oxide layers of Al 2 O 3 /Y 2 O 3 /MgO/CeO 2 in order from the bottom to the top layer 33,34 (Figure S1). In particular, MgO layer with a biaxially texture is prepared by an ion-beam-assisted deposition method.…”

Section: Methodsmentioning

confidence: 99%

Performance improvement of iron chalcogenide films grown at high laser repetition rates by pulsed laser deposition

Mou,

Ye,

Zhu

et al. 2023

J Am Ceram Soc.

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For mass production, the high deposition rate is necessary. A powerful approach is to deposit Fe(Se, Te) (FST) superconducting films at high laser repetition rate by pulsed laser deposition. Hence the FST films were grown on flexible metallic tapes using pulsed laser deposition at different laser repetition rates to explore the effect of laser repetition rate on the properties. It was found that as the laser repetition rate increases, the crystallinity and stoichiometry of FST films deteriorate, resulting in a degeneration in superconductivity. The critical temperature of the FST film deposited at a high repetition rate of 120 Hz dropped to 12.89 K. Furthermore, high performance FST film was successfully deposited at 120 Hz by increasing the substrate temperature with = 16.96 K and = 18.32 K. And the self‐field critical current density can reach 1.3 MA/cm2 at 4.2 K. The analysis of the pinning mechanism reveals that normal surface pinning centers play a dominant part in the FST film and are independent of the temperature. The collective pinning theory states that the FST film exhibits l pinning. The results may offer valuable information for rapid deposition of FST coated conductors for industrial production.This article is protected by copyright. All rights reserved

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Section: Methodsmentioning

confidence: 99%

Performance improvement of iron chalcogenide films grown at high laser repetition rates by pulsed laser deposition

Mou,

Ye,

Zhu

et al. 2023

J Am Ceram Soc.

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“…Previous literature revealed the tendency of CeO 2 to switch from oxygen rich Ce 4+ to oxygen poor Ce 3+ states and vice versa by reacting to the ambient that could be oxidising or non-oxidising [102][103][104][105]. According to Ye et al (2021) [106], an epitaxial CeO 2 film with Ce 3+ and oxygen vacancies was formed by depositing CeO 2 onto a SrTiO 3 substrate using laser molecular beam epitaxy. This deposition process occurred at a base pressure below 5 × 10 −7 Pa and a substrate temperature ranging from 300 °C to 700 °C, without the presence of a gas ambient.…”

Section: Ceo 2 As a High K Passivation Layermentioning

confidence: 99%

A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures

Nsar,

Hassan,

Cheong

et al. 2024

Mater. Res. Express

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In this review, an introduction to nanostructured films focusing on cerium oxide (CeO2) as high dielectric constant (k) material for silicon-based metal-oxide-semiconductor devices, and subsequently background of using low k silicon dioxide as well as the transition to high k materials was presented. Moreover, the properties of CeO2 in general and the applications of CeO2 and doped CeO2 films as high k passivation layers were reviewed. The beneficial effect of using CeO2 seed layers on the characteristics of CeO2 nanostructures was discussed. Moreover, challenges faced by CeO2 and the potential of doping trivalent cations into the CeO2 lattice for enhancement of passivation properties were thoroughly discussed.

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In-field Performance Comparison and Vortex Pinning Analysis in Depth of Pristine and BaHfO3-Doped Y0.5Gd0.5Ba2Cu3O7-δ Films in Different Temperature Regions

Mou²,

Zhu³

et al. 2022

J Supercond Nov Magn

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Orientation competition growth and mechanism of SrTiO3 film on CeO2 layer

Cited by 7 publications

References 121 publications

Performance improvement of iron chalcogenide films grown at high laser repetition rates by pulsed laser deposition

Performance improvement of iron chalcogenide films grown at high laser repetition rates by pulsed laser deposition

A review on potential use of cerium oxide and doped cerium oxide as high dielectric constant seed layers for overgrowth of cerium oxide nanostructures

In-field Performance Comparison and Vortex Pinning Analysis in Depth of Pristine and BaHfO3-Doped Y0.5Gd0.5Ba2Cu3O7-δ Films in Different Temperature Regions

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