Organometallic vapor phase epitaxial growth of a new semiconductor alloy: GaP1−xSbx

Abstract

The III/V semiconductor alloy GaP1−xSbx has been grown for the first time. This alloy, which has a large miscibility gap at the growth temperatures of 530–600 °C, has been grown by organometallic vapor phase epitaxy at atmospheric pressure. In spite of the miscibility gap, which is calculated to extend from x=0.01 to 0.99 at 530 °C, layers with excellent surface morphologies could be grown throughout the entire composition range. The 10 K energy band gap has been determined as a function of composition by using photoluminescence, x-ray diffraction, and electron microprobe analysis, yielding bowing parameters of 3.8 and 2.7 eV for the Γ and X conduction band minima, respectively.

Growth of various antimony-containing alloys by MOVPE

“…Surprisingly the growth of GaPSb with TMGa, TMSb and phosphine was also reported [8], which could not be achieved in this study.…”

Decomposition Mechanisms of Antimony Source Compounds for Organometallic Vapor-Phase Epitaxy

“…This suggests that methyl radical attack on the TMSb parent molecule or its decomposition products to abstract H atoms is unimportant. The addition of azomethane (CH 3 N) 2 as a "clean" source of methyl radicals retards the TMSb decomposition slightly. This supports a reversible step in TMSb pyrolysis (reaction 7) that was previously reported [18].…”

“…This technique has been used to produce Sb-contaiuing metastable materials such as GalnAsSb [1], GaPSb [2], InPSb [3], and GaAsSb [4] which have never been produced by any other technique. InAs 1 .xSb x which can also be grown by OMVPE [5], has the smallest band gap (x = 0.6, Eg 0.1 eV at 300 K) of any of the III/V semiconductor materials and this has attracted interest for infrared detection in the 8-12 uLrn spectral range.…”

Band gap and band offset of (GaIn)(PSb) lattice matched to InP

“…Up to now, only the growth of ternary Ga͑P y Sb 1−y ͒ has been reported. [3][4][5][6] Ga͑P 0.35 Sb 0.65 ͒, lattice matched on InP, shows a 300 K band-gap energy of 0.845 eV. 6 Commonly, the band-gap energies of ternary alloys are described by a quadratic form: 7…”