Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates

Xing, G. C.; Bachmann, K. J.; Solomon, Glenn S.; Posthill, J. B.; Timmons, Michael B.

doi:10.1016/0022-0248(89)90012-2

Cited by 28 publications

(7 citation statements)

References 11 publications

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“…While the photovoltaic properties of ZnGeP 2 are less well studied, there has been more research on cation disorder in this material. There are several bulk crystal studies of ZnGeP 2 that show the detection of both the ordered chalcopyrite phase and the disordered zincblende phase. , Epitaxial ZnGeP 2 thin films were grown on Si and GaP in the late 1980s and early 1990s using MOCVD. − However, the effects of disorder on optical properties in thin films had not been investigated until a recent study on methods to quantify disorder in ZnGeP 2 polycrystalline films . Schnepf et al found a decrease in optical absorption onset with a decrease in S ; these results are shown in Figure b.…”

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confidence: 99%

Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors

et al. 2020

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Controlling site disorder in ternary and multinary compounds enables tuning optical and electronic properties at fixed lattice constants and stoichiometries, moving beyond many of the challenges facing binary alloy systems. Here, we consider possible enhancements to energy-related applications through the integration of disorder-tunable materials in devices such as light-emitting diodes, photonics, photovoltaics, photocatalytic materials, batteries, and thermoelectrics. However, challenges remain in controlling and characterizing disorder. Focusing primarily on II–IV–V2 materials, we identify three metrics for experimentally characterizing cation site disorder. Complementary to these experiments, we discuss simulation methods to understand disordered materials. Nonidealities, such as off-stoichiometry and oxygen incorporation, can occur while synthesizing metastable disordered materials. While nonidealities may seem undesirable, we describe how if harnessed they could provide another knob for tuning disorder and subsequently properties. To illustrate the effects of disorder on device-relevant properties, we provide case examples of disordered materials and their potential in device applications.

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confidence: 99%

Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors

et al. 2020

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“…In addition, we consider that the crystallographic affinity [5,6] between MnGeP 2 and Ge may further assist the crystal growth. This consideration is also supported by our preliminary study in which extremely low growth rate is required to obtain MnGeP 2 and to suppress other phases [4].…”

Section: Article In Pressmentioning

confidence: 99%

“…In order to achieve two-dimensional (2D) growth of the MnGeP 2 thin films, we introduced a Ge buffer layer from the following reasons: It has been known that II-Ge-V 2 chalcopyrites tend to form a solid solution with Ge [5,6], and the lattice constant of Ge (5.657 Å ) is close to both lattice constants of GaAs (5.653 Å ) and MnGeP 2 [7,8]. Mn and Ge were supplied from solid sources using K-cells with the beam flux of Mn and Ge around 6 Â 10 À9 Torr, while P 2 was supplied by decomposing tertiary butyl phosphine (TBP) gas with flow rate of 2.0 sccm using a cracking cell whose temperature was 835 1C.…”

Section: Introductionmentioning

confidence: 99%

RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(001) substrate using Ge–buffer layer

Minami

Jogo

Morishita

et al. 2005

Journal of Crystal Growth

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“…19,20 Also, epitaxial films of ZnSi x Ge 1Ϫx P have been produced by organometallic chemical vapor disposition ͑OMCVD͒ at the same substrate temperature. Smooth heteroepitaxial films of ZnGeP 2 are obtained by organometallic chemical vapor deposition at atmospheric pressure at 585°C on GaP and Si substrates, respectively.…”

Section: Heteroepitaxy Of Noncubic Lattice-matched Compounds On Smentioning

confidence: 99%

Heteroepitaxy of lattice-matched compound semiconductors on silicon

Bachmann

Dietz

Miller

et al. 1995

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Latticematched Sc1−x Er x As/GaAs heterostructures: A demonstration of new systems for fabricating lattice matched metallic compounds to semiconductors New approaches to epitaxy of transition metals and rare earths: Heteroepitaxy on latticematched buffer films on semiconductors (invited)The heteroepitaxial overgrowth of silicon by nearly lattice-matched compound semiconductors is reviewed in the context of the separation of the chemical problems associated with the initial sealing of the silicon surface by a contiguous epitaxial compound film from the problems associated with the generation of strain during heteroepitaxial growth. Of the mixed compound systems available dilute solid solutions of composition Al x Ga 1Ϫx N y P 1Ϫy and ZnS y Se 1Ϫy as well as ZnSi x Ge 1Ϫx P are suitable candidates for the exactly lattice-matched epitaxial overgrowth of silicon. Real-time process monitoring by nonintrusive methods is important for gaining an understanding of the epitaxial overgrowth mechanism and for controlling the film properties. A new method, p-polarized reflectance spectroscopy is introduced that provides detailed information about the growth rate per cycle, the bulk optical properties of the film and its topography. Submonolayer resolution is accomplished for thousands of Å of film growth by pulsed chemical beam epitaxy. While the cubic materials considered here generally afford easier control of the electrical and optical properties, the noncubic materials have advantages in the sealing of the silicon surface because of their anisotropic growth and the formation of metastable solid solutions that may permit the graded growth of compound films under exactly lattice-matched conditions. Therefore, no clear-cut preference in the materials selection for nearly lattice-matched overgrowth of silicon by compound semiconductors can be identified at this time.

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Organometallic chemical vapor deposition of epitaxial ZnGeP2 films on (001) GaP substrates

Cited by 28 publications

References 11 publications

Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors

Utilizing Site Disorder in the Development of New Energy-Relevant Semiconductors

RHEED observation of the growth of chalcopyrite-type MnGeP2 on GaAs(001) substrate using Ge–buffer layer

Heteroepitaxy of lattice-matched compound semiconductors on silicon

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