Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Choi, Ji Min; Park, Sunghak; Lee, Joohee; Hong, Kootak; Kim, Do-Hong; Moon, Cheon Woo; Park, Gyeong Do; Suh, Junmin; Hwang, Jun Gi; Kim, Soo Young; Jung, Hyun Suk; Park, Nam‐Gyu; Han, Seungwu; Nam, Ki Tae; Jang, Ho Won

doi:10.1002/adma.201600859

Cited by 289 publications

(252 citation statements)

References 56 publications

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“…This demonstrates the potential application in the memory devices. By utilizing the structure of Ag/perovskite/Pt, Choi et al [107] realized the low voltage multilevel resistive switching devices with high ON/OFF ratio. Furthermore, Gu et al [108] achieved the flexible perovskite memory device by depositing perovskite precursor solution on transparent plastic substrates coated with conducting layer.…”

Section: Memory Devicementioning

confidence: 99%

Origins and mechanisms of hysteresis in organometal halide perovskites

Guerrero

Zhong

et al. 2017

J. Phys.: Condens. Matter

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Inorganic–organic halide organometal perovskites, such as CH3NH3PbI3 and CsPbI3, etc, have been an unprecedented rising star in the field of photovoltaics since 2009, owing to their exceptionally high power conversion efficiency and simple fabrication processability. Despite its relatively short history of development, intensive investigations have been concentrating on this material; these have ranged from crystal structure analysis and photophysical characterization to performance optimization and device integration, etc. Yet, when applied in photovoltaic devices, this material suffers from hysteresis, that is, the difference of the current–voltage (I–V) curve during sweeping in two directions (from short-circuit towards open-circuit and vice versa). This behavior may significantly impede its large-scale commercial application. This Review will focus on the recent theoretical and experimental efforts to reveal the origin and mechanism of hysteresis. The proposed origins include (1) ferroelectric polarization, (2) charge trapping/detrapping, and (3) ion migration. Among them, recent evidence consistently supports the idea that ion migration plays a key role for the hysteretic behavior in perovskite solar cells (PSCs). Hence, this Review will summarize the recent results on ion migration such as the migrating ion species, activation energy measurement, capacitive characterization, and internal electrical field modulation, etc. In addition, this Review will also present the devices with alleviation/elimination of hysteresis by incorporating either large-size grains or phenyl-C61-butyric acid methyl ester molecules. In a different application, the hysteretic property has been utilized in photovoltaic and memristive switching devices. In sum, by examining these three possible mechanisms, it is concluded that the origin of hysteresis in PSCs is associated with a combination of effects, but mainly limited by ion/defect migration. This strong interaction between ion motion and free charge carrier transport can be modulated by the prevalent crystalline structure, chemical passivation, and an external photo/electrical field.

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Section: Memory Devicementioning

confidence: 99%

Origins and mechanisms of hysteresis in organometal halide perovskites

Guerrero

Zhong

et al. 2017

J. Phys.: Condens. Matter

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“…Moreover, organic cations that can rotate under an applied electrical field show ferroelectric behavior by positive and negative poling, and have structural flexibility 11 . These properties of OIP materials suggest applications as computer memory application 12–16 .…”

Section: Introductionmentioning

confidence: 95%

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Hwang

Lee

2017

Sci Rep

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Organic-inorganic perovskite materials have attracted extensive attention for wide range of applications such as solar cells, photo detectors, and memory devices. However, the lack of stability in ambient condition prevented the perovskite materials from applying to practical applications. Here, we demonstrate resistive switching memory devices based on organic-inorganic perovskite (CH3NH3PbI3) that have been passivated using thin metal-oxide-layers. CH3NH3PbI3-based memory devices with a solution-processed ZnO passivation layer retain low-voltage operation and, on/off current ratio for more than 30 days in air. Passivation with atomic-layer-deposited (ALD) AlOx is also demonstrated. The resistive switching memory devices with an ALD AlOx passivation layer maintained reliable resistive switching for 30 d in ambient condition, but devices without the passivation layer degraded rapidly and did not show memory properties after 3 d. These results suggest that encapsulation with thin metal-oxide layers is easy and commercially-viable methods to fabricate practical memory devices, and has potential to realize memory devices with long-term stability and reliable, reproducible programmable memory characteristics.

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“…[4] Stable resistive switching (RS) behavior has been observed in various perovskite oxide materials based memory devices, for instances, SrTiO 3 , [5] BaTiO 3 , [6] and BiFeO 3 , [7] etc. [13] Many attempts have been focused on this material because of its outstanding properties, for instance, the low exciton binding energy, long-range charge diffusion length, high carrier mobility, high absorption coefficient, and suitable bandgaps. [8] In recent years, halide perovskites, with formula of ABX 3 (A = CH 3 NH 3+ , CH(NH 2 ) 2+ , Cs + ; B = Pb 2+ , Sn 2+ ; X = Cl − , Br − , I − ), have attracted intensive attention due to their huge potential applications in industrial applications, such as solar cells, [9] photodetectors, [10] light emitting diodes, [11] lasers, [12] and RS memory devices.…”

mentioning

confidence: 99%

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

Zhu

Cheng

Shi

et al. 2019

Adv Elect Materials

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density, fast switching speed, multibit storage potential, and nonvolatile nature, is considered as one of the most promising candidate in nonvolatile memory field. [1][2][3] The RRAM device, with sandwich structure of top metal (TE)/ switching layer/bottom metal (BE), can be switched between a low resistance state (LRS) and high resistance state (HRS) under the stimulation of different voltage amplitudes or polarities. [4] Stable resistive switching (RS) behavior has been observed in various perovskite oxide materials based memory devices, for instances, SrTiO 3 , [5] BaTiO 3 , [6] and BiFeO 3 , [7] etc. However, the perovskite oxide-based RRAM devices are limited by several disadvantages, such as high processing temperature and rigid ceramic property of the switching layer. [8] In recent years, halide perovskites, with formula of ABX 3 (A = CH 3 NH 3+ , CH(NH 2 ) 2+ , Cs + ; B = Pb 2+ , Sn 2+ ; X = Cl − , Br − , I − ), have attracted intensive attention due to their huge potential applications in industrial applications, such as solar cells, [9] photodetectors, [10] light emitting diodes, [11] lasers, [12] and RS memory devices. [13] Many attempts have been focused on this material because of its outstanding properties, for instance, the low exciton binding energy, long-range charge diffusion length, high carrier mobility, high absorption coefficient, and suitable bandgaps. [14][15][16][17] To date, most studies have focused on the organicinorganic hybrid halide perovskites. [16,17] However, despite the demonstrated remarkable performances of the organicinorganic halide perovskites based devices, their industrial applications are limited to the instability, including the poor thermal stability and moisture sensitivity, which is due to the instability nature of the organic cations. [18] Therefore, to obtain air-stable halide perovskites, replacing instable organic cations by stable cations is of great importance. To address this issue, the organic cation is substituted by cesium (Cs) and the ascalled all-inorganic cesium lead halide perovskite (CsPbX 3 ) has attracted a great deal of attention in RS memory field. [19][20][21] All-inorganic halide perovskites have attracted a great deal of attention for applications in resistive switching (RS) memory devices due to their superior stability compared to organic-inorganic hybrid halide perovskites. RS memory devices utilizing air-stable all-inorganic halide perovskite cesium lead bromide (CsPbBr 3 ) film as the switching layer, which are successfully prepared by spin coating at low temperature, are demonstrated. Memory devices based on CsPbBr 3 film exhibit typical reproducible bipolar RS behavior and superior switching characteristics, including the high ON/OFF ratio (≈10 4 ), long data retention (>5 × 10 4 s), and environmental stability. In addition, multilevel storage capability can be achieved through controlling the different compliance currents. The formation and rupture of bromine (Br) vacancy conducting filaments (CFs) is proposed to explain the switching b...

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Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Cited by 289 publications

References 56 publications

Origins and mechanisms of hysteresis in organometal halide perovskites

Origins and mechanisms of hysteresis in organometal halide perovskites

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device

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Organolead Halide Perovskites for Low Operating Voltage Multilevel Resistive Switching

Cited by 289 publications

References 56 publications

Origins and mechanisms of hysteresis in organometal halide perovskites

Origins and mechanisms of hysteresis in organometal halide perovskites

Hybrid Organic-Inorganic Perovskite Memory with Long-Term Stability in Air

Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr3 Film‐Based Memory Device

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Bromine Vacancy Redistribution and Metallic‐Ion‐Migration‐Induced Air‐Stable Resistive Switching Behavior in All‐Inorganic Perovskite CsPbBr₃ Film‐Based Memory Device