Abstract:An efficient process is developed by spin‐coating a single‐component, self‐assembled monolayer (SAM) to simultaneously modify the bottom‐contact electrode and dielectric surfaces of organic thin‐film transistors (OTFTs). This effi cient interface modifi cation is achieved using n‐alkyl phosphonic acid based SAMs to prime silver bottom‐contacts and hafnium oxide (HfO2) dielectrics in low‐voltage OTFTs. Surface characterization using near edge X‐ray absorption fi ne structure (NEXAFS) spectroscopy, X‐ray photoel… Show more
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