Organic temperature sensors and organic analog-to-digital converters based on p-type and n-type organic transistors

Nakayama, Koji; Cha, Bu-Sang; Kanaoka, Yusuke; Isahaya, Nobuaki; Omori, Mariko; Uno, Mayumi; Takeya, Jun

doi:10.1016/j.orgel.2016.06.001

Cited by 17 publications

(14 citation statements)

References 22 publications

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“…3a, 350 nm). To our knowledge, it is far higher than that of the reported temperature sensors based on OFET [31][32][33][34][35] . In addition, it should be noted that this high sensitivity achieved in the off-state (with current level of about nA) of OFETs produces high input impedance, which usually leads to large noise.…”

Section: Resultsmentioning

confidence: 66%

“…As expected, the devices show significant difference: the devices with the grain size distributed between 260 nm and 420 nm exhibit very strong temperaturedependent characteristic. The sensitivity of these devices is about two orders of magnitude, and the highest value is more than two and a half orders of magnitude at the grain size of about 350 nm, which value is significantly larger than the standard thermalactivated carrier transport 12,[31][32][33][34][35] . If the typical activation energy of a standard thermally-activated carrier transport is in the range of 100-200 meV for intrinsic organic semiconductors 12,31 , the expected temperature sensitivity is only around 1-3 from 298 K to 358 K. On the contrary, the electrical properties of the devices with the grain size <260 nm or larger than 420 nm are lightly changed with the varied temperature.…”

Section: Resultsmentioning

confidence: 91%

“…As a temperature sensor 29,30 , DNTT device shows a high sensitivity (defined as the relative current change value) of 155. To our knowledge, it is the best performance among the reported temperature sensors based on organic field-effect transistor (OFET) [31][32][33][34][35] . As demonstrations, the DNTT OFET has achieved detection of ambient infrared (IR), identification of human touch and mapping of temperature distribution.…”

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confidence: 99%

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Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

et al. 2021

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The temperature dependence of charge transport dramatically affects and even determines the properties and applications of organic semiconductors, but is challenging to effectively modulate. Here, we develop a strategy to circumvent this challenge through precisely tuning the effective height of the potential barrier of the grain boundary (i.e., potential barrier engineering). This strategy shows that the charge transport exhibits strong temperature dependence when effective potential barrier height reaches maximum at a grain size near to twice the Debye length, and that larger or smaller grain sizes both reduce effective potential barrier height, rendering devices relatively thermostable. Significantly, through this strategy a traditional thermo-stable organic semiconductor (dinaphtho[2,3-b:2′,3′-f]thieno[3,2-b]thiophene, DNTT) achieves a high thermo-sensitivity (relative current change) of 155, which is far larger than what is expected from a standard thermally-activated carrier transport. As demonstrations, we show that thermo-sensitive OFETs perform as highly sensitive temperature sensors.

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Section: Resultsmentioning

confidence: 66%

Section: Resultsmentioning

confidence: 91%

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confidence: 99%

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Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

et al. 2021

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“…Созданы также датчики на гибких подложках, в том числе матрицы размером 16 × 16 элементов на основе динафтотиенотиофена DNTT (dinaphtho [2,3- Полгода назад появилась информация о датчике на гибкой подложке [20], который представляет собой полноценную органическую микросхему, состоящую из сенсора и АЦП (рис.7).…”

Section: датчики температурыunclassified

Organic sensors: design, technology, applications

Safonov¹

2017

ElNTB

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“…Finally, we combined the binary counter with a 4‐bit selector, a temperature sensor, a comparator, a load‐modulation transistor, and an antenna to demonstrate a prototypical RFID tag (Figure a). The details of the temperature sensor and the comparator, which works as a 1‐bit analog/digital converter, have been reported elsewhere . Here, the binary counter generates a base signal that allows the selector circuits to choose one of the four data bits.…”

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confidence: 99%

Painting Integrated Complementary Logic Circuits for Single‐Crystal Organic Transistors: A Demonstration of a Digital Wireless Communication Sensing Tag

Yamamura

Matsui

Uno

et al. 2017

Adv Elect Materials

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transport, solubility suitable for solution processing, thermal stability sufficient for curing, and chemical stability in air. The compound 3,11-didecyldinaphtho[2,3d:2′,3′-d′]benzo [1,2-b:4,5-b′]dithiophene (C 10 -DNBDT-NW) is an example of a p-type compound. This semiconductor shows a hole mobility of 16 cm 2 V −1 s −1 , moderate solubility in common aromatic solvents such as o-dichlorobenzene (≈0.1 wt%) at 60 °C, and excellent stability up to 200 °C. [3] It has also been reported that the n-type materials N,N′-1H,1Hperfluorobutyldicyanoperylene-carboxydiimide (PDIF-CN 2 ) and benzo [1,2-c:4,5-c′] bis ([1,2,5]thiadiazole) (BBT), both of which are solution-processable in air, exhibit electron mobilities as high as 1.3 and 0.61 cm 2 V −1 s −1 , respectively. [8,9] Currently, it is anticipated that the next step in the evolution of electronics will be to establish reliable and reproducible fabrication processes for integrated electronic devices that have practical applications. As an example, hundreds of transistors must operate simultaneously in the integrated circuits of low-cost plastic sensor films [10,11] and radio-frequency identification (RFID) tags, [12,13] which are presently the most important devices associated with advances in materials science. Herein, we report a method of fabricating fully functionalized wireless digital sensor circuits, employing recent material innovations based on high-performance painted OFETs. Using these devices, it is anticipated that exceptional quantities of data will be able to be extracted from low-cost film sensors, leading to a so-called Internet-of-Things community. This technology is based on continuously painting uniform single-crystalline films composed of p-and n-type organic semiconductors that are situated next to one another, allowing complementary circuits to be designed by connecting the films. To demonstrate the exceptional reliability and performance of such devices, this work performed the firstever successful demonstration of solution-processed digital sensor circuits incorporating binary counters, selectors, a thermosensor, an analog-digital converter, and a wireless communication unit. We note that mobility values close to the maximum possible values were realized in regions of the semiconductor Recent progress in the development of organic semiconductor materials has improved the performance of both p-and n-type transistors. Currently, it is anticipated that the next step in the evolution of electronics will be to establish a reliable fabrication technique for integrated electronic devices such as plastic sensor films and radio-frequency identification (RFID) tags. Herein, a new fabrication process to grow line-shaped organic single-crystalline films with widths on the order of one mm is reported. To realize large-scale complementary logic circuits, it is necessary to precisely control the growth conditions of p-type and n-type semiconductors when painting on different areas on the same substrate. This method makes it possible to fabricate highly ori...

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Organic temperature sensors and organic analog-to-digital converters based on p-type and n-type organic transistors

Cited by 17 publications

References 22 publications

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

Effectively modulating thermal activated charge transport in organic semiconductors by precise potential barrier engineering

Organic sensors: design, technology, applications

Painting Integrated Complementary Logic Circuits for Single‐Crystal Organic Transistors: A Demonstration of a Digital Wireless Communication Sensing Tag

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