2021
DOI: 10.1002/adfm.202101951
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Organic Synaptic Transistors: The Evolutionary Path from Memory Cells to the Application of Artificial Neural Networks

Abstract: The progress of neural synaptic devices is experiencing an era of explosive growth. Given that the traditional storage system has yet to overcome the von Neumann bottleneck, it is critical to develop hardware with bioinspired information processing functions and lower power consumption. Transistors based on 2D materials, metal oxides, and organic materials have been adopted to mimic the synapse of a human brain, due to their high plasticity, parallel computing, integrated storage, and system information proces… Show more

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Cited by 92 publications
(100 citation statements)
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References 130 publications
(199 reference statements)
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“…Next, the photosynaptic transistor was tested with different intensities of 450 nm light (Figure 4c ) or different light wavelengths with an intensity of 22.0 mW cm −2 (Figure 4d ). The PPF index can be fitted by two exponential decay curves as follows [ 45 ] where τ 1 and τ 2 are the characteristic relaxation of the slow and rapid phases. The PPF index increased from 1.26, 1.31, to 1.38 as the light intensities were increased from 2.20, 18.0, to 22.0 mW cm −2 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Next, the photosynaptic transistor was tested with different intensities of 450 nm light (Figure 4c ) or different light wavelengths with an intensity of 22.0 mW cm −2 (Figure 4d ). The PPF index can be fitted by two exponential decay curves as follows [ 45 ] where τ 1 and τ 2 are the characteristic relaxation of the slow and rapid phases. The PPF index increased from 1.26, 1.31, to 1.38 as the light intensities were increased from 2.20, 18.0, to 22.0 mW cm −2 , respectively.…”
Section: Resultsmentioning
confidence: 99%
“…Unlike two-terminal memristors, the basic transistor structure usually adopts multiple-terminal configuration, and superior weight controllability as well as advanced synaptic functions of nonvolatile in-memory computing devices can be realized by additional input terminals and versatile device configurations. [221][222][223][224][225][226][227][228][229][230] It also bears mentioning that we should distinguish these transistor-based nonvolatile in-memory computing system from the volatile in-memory computing primitives based on, for example, dynamic random access memory (DRAM) and static random access memory (SRAM). Although the CMOS-based DRAM and SRAM are mature commercialized techniques, their slow scaling trend and limited capacitance have motivated the research focus toward nonvolatile in-memory computing technology.…”
Section: D In-memory Computing Architecture Based On Transistorsmentioning
confidence: 99%
“…[ 152 ] Organic neuromorphic devices for artificial neural network application have been discussed in detail in some recent works. [ 23,53,153 ]…”
Section: Integrated Ferroelectric Memories For Edge Applicationsmentioning
confidence: 99%
“…[152] Organic neuromorphic devices for artificial neural network application have been discussed in detail in some recent works. [23,53,153] Ferroelectric polymers are promising for vital parameter sensing like pulse pressure and change in body temperature. [154] By combining their piezo-and pyroelectric properties, multiple parameter sensing through a single sensing element is possible.…”
Section: Ferroelectric Polymer-based Memory Integrated Sensors For Sm...mentioning
confidence: 99%