2022
DOI: 10.1039/d2tc00525e
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Organic photodetectors with high detectivity for broadband detection covering UV-vis-NIR

Abstract: OPDs with ultra-low dark current density and high detectivity are developed via interfacial and morphological modifications in the ternary device. A highest D* at 1060 nm exceeding 8.2 × 1012 Jones is achieved with fast response and wide LDR.

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Cited by 28 publications
(25 citation statements)
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“…As shown in Fig. S5 (ESI†), NIR-OPD based on BODIPY-F : PCBM (0.2 : 1, w/w) presents the highest R value (−5.0 V bias) of 130 mA W −1 at 675 nm, outperforming the reported values of NIR-OPDs 34–40 (see Table S3, ESI† for details).…”
Section: Resultsmentioning
confidence: 95%
See 1 more Smart Citation
“…As shown in Fig. S5 (ESI†), NIR-OPD based on BODIPY-F : PCBM (0.2 : 1, w/w) presents the highest R value (−5.0 V bias) of 130 mA W −1 at 675 nm, outperforming the reported values of NIR-OPDs 34–40 (see Table S3, ESI† for details).…”
Section: Resultsmentioning
confidence: 95%
“…S7, ESI †). 42,43 Among the NIR-OPDs with different D : A ratio, the device based on BODIPY-F : PCBM (0.2 : 1, w/w) achieves the highest D* value in the NIR range under À1.0 V bias, reaching 6.85 Â 10 11 and 5.94 Â 10 11 Jones at a wavelength of 660 and 840 nm, respectively.…”
Section: Device Performancementioning
confidence: 99%
“…Figure S1 shows the EQE spectra of the OPDs operated under a −1 V bias. We used eq to calculate the responsivities ( R ) of the OPDs , R ( λ ) = normalE normalQ normalE ( λ ) × q λ h ν ( A W 1 ) where q is the elementary charge, λ is the incident wavelength, and h ν is the incident photon energy (where h is the Planck constant and ν is the frequency). Figure d and Table display the calculated values of R .…”
Section: Results and Discussionmentioning
confidence: 99%
“…To improve the device performances of 2C60–2BT–POR SCOSCs, some optimizations were carried out. The J–V curve of the optimized device is shown in Figure , and the data are summarized in Tables , S2, and S3 . Among these optimized conditions, when the active layers were treated via SVA in an atmosphere of CS 2 for 40 s, the SCOSCs showed the best PCE of 1.51%, with a V OC of 1.05 V, a J SC of 4.22 mA cm –2 , and an FF of 34.25%.…”
Section: Resultsmentioning
confidence: 99%
“…The J−V curve of the optimized device is shown in Figure 4, and the data are summarized in Tables 1, S2, and S3. 38 Among these optimized conditions, when the active layers were treated via SVA in an atmosphere of CS 2 for 40 s, the SCOSCs showed the best PCE of 1.51%, with a V OC of 1.05 V, a J SC of 4.22 mA cm −2 , and an FF of 34.25%. Accordingly, the EQE curve of the SCOSC exceeds 20% in the visible region (Figure 4).…”
Section: Photovoltaic Propertiesmentioning
confidence: 99%