Organic-metal-semiconductor transistor with high gain

Abstract

We use evaporated C60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome the barrier is measured as at least 0.99. Our metal-base transistor is easy to fabricate as it does not involve wafer bonding or require perfect semiconductor-on-metal growth.

Polymer hot-carrier transistor

“…A similar idea of using C 60 as the emitter but still utilizing silicon as the collector is recently reported. 8,9 But such device turns out to be a permeable base transistor instead of the hot-carrier one. Because of the disorder of polymer and that the interface does not vary so abruptly, we expect the backscattering in our case will not be as severe as in silicon hot-carrier transistor and higher ␤ is expected.…”

33.1: Invited Paper: A Novel Vertical‐Type Light‐Emitting Transistor and Panel Design on Amorphous Silicon Backplane for High Resolution TV Application

“…In contrast to this vertical-type lightemitting transistors (VLTs) potentially have large luminescence area and low-voltage/high-current. Recently, several verticaltype devices have been proposed, polymer grid triodes, [1] organic static induction transistors, [2]- [5] organic/inorganic hybrid transistors, [6] [7] space-charge-limited transistors, [8] [9] unique vertical architecture transistors, [10] metal-base organic transistors, [11][12] and carbon nanotube enabled vertical organic light emitting transistors. [13] However, these devices are not amenable to fine patterning on glass and are incompatibility with conventional backplane such as amorphous silicon (a-Si) or low temperature poly-crystalline silicon (LTPS) TFTs on glass substrate.…”

Magnetic metal-base transistor with organic emitter

“…6 Hybrid spintronic devices, associating organic semiconductors and magnetic materials, have already been reported. The emitter, however, is an organic layer, either evaporated C 60 or tris(8hydroxiquinoline) aluminum.…”

“…1. 6 Another feature of Fig. Figure 2 shows the common-base output characteristics obtained for a typical Al/ C 60 / Au/ Co/ Cu/ Co/ n-Si/ Ga-Al device for various values of the emitter current I E in the absence of an applied magnetic field.…”