Organic Material Removal by Thermally Activated Ozone Gas

Sotoku, Kota; Inaba, Masaki; Takahashi, Hiroaki

doi:10.4028/www.scientific.net/ssp.282.19

Cited by 2 publications

(2 citation statements)

References 6 publications

(6 reference statements)

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“…( 2) and Eq. ( 3) in the region over 150℃, the generation of O* is predominant above 150℃ [6]. Moreover, it has been proposed that the SOC film reacts with O* to decompose, as shown in Eq.…”

Section: Resultsmentioning

confidence: 99%

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Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas

Iwahata

Inaba

Sebaai³

et al. 2021

SSP

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Thermally activated ozone gas (TAO) was demonstrated as an alternative technology to conventional spin-on carbon (SOC) stripping. The SOC stripping rate with ozone gas was found to be a function of substrate temperature and actual ozone amount calculated from the ozone flow rate and concentration. Furthermore, work function metal (WFM) stripping rate showed a high selectivity to SOC films, and the amount of oxidation TiN, which is a WFM metal, was also equivalent to conventional technology of SOC stripping. This TAO gas process can be used in clean tools, making it a promising integrated solution for SOC stripping followed by post clean.

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Section: Resultsmentioning

confidence: 99%

“…(6), and it indicates that the SOC removal process by TAO is supported by the Arrhenius equation, and is chemically controlled by the process temperature. 𝑘𝑘 ≈ 5.79 × 10 5 𝑒𝑒𝑒𝑒𝑒𝑒 (−34000/𝑅𝑅𝑅𝑅)(6)…”

mentioning

confidence: 99%

Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas

Iwahata

Inaba

Sebaai³

et al. 2021

SSP

Self Cite

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Design of plasma strip chamber for uniform gas supply with fluid flow simulation

Jang,

Jo,

Hong

2024

Journal of Vacuum Science &Amp; Technology B

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Within the domain of semiconductor fabrication, which entails progressively complex patterning steps, the significance of plasma stripping processes, particularly to achieve the effective stripping of photoresist (PR) without damaging the underlying substrates via uniform gas distribution across 300 mm wafers, cannot be overstated. The efficacy of plasma stripping is influenced by the design of the components of the process chamber, which is critical for advancing semiconductor manufacturing technologies. In this study, we elucidated the influence of the design of a process chamber, particularly the showerhead nozzle angles, on the plasma chemical reactions of radicals emanating from conventional PR equipment using computational fluid dynamics simulations. We assessed the impact of the showerhead design, which incorporated divergent or angled gas supply nozzles, on the distribution of the supply gas across the wafer within the process chamber. Five distinct angles of showerhead nozzles were investigated, and the uniformity of the oxygen mass fractions was optimized for nozzle angles of 45° and 60°. Additionally, the factors contributing to the low uniformity in a showerhead design were identified and design components were modified, resulting in a 16% improvement in uniformity. This study delineated the relationship between the nozzle position, mass fraction, and flow streamlines, thereby establishing the critical role of equipment design for enhancing the plasma stripping process. Furthermore, this principle transcends the realm of stripping equipment design; it is anticipated that incorporating flow dynamics simulations for designing process components will enhance the overall process performance.

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Organic Material Removal by Thermally Activated Ozone Gas

Cited by 2 publications

References 6 publications

Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas

Removal of SOC Hard Mask for Patterning of Work Function Metal by Thermally Activated Ozone Gas

Design of plasma strip chamber for uniform gas supply with fluid flow simulation

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