Organic lighting devices are plausibly more vulnerable to oxygen than moisture

Huang, Tzuen Hsi; Chen, Hou-Jen; Chen, Ching-Hsiu; Lin, Yu‐Chi; Chen, Sun-Zen; Wen, Shih-Wen; Jou, Jwo‐Huei

doi:10.1016/j.orgel.2021.106333

Cited by 5 publications

(2 citation statements)

References 30 publications

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“…However, flexible QLED technology is at a very early stage. Recent developments [6][7][8] indicate that flexible QLEDs will perform better than flexible OLEDs, as the environmental vulnerability of organic light-emitting material compromises OLED reliability [9]. QLEDs using inorganic quantum-dot (QD) light-emitting materials can be much more reliable [10].…”

Section: Introductionmentioning

confidence: 99%

Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices

Kim

Kwon

et al. 2022

Micromachines

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Fabrication of high-performance, flexible quantum-dot light-emitting diodes (QLEDs) requires the reliable manufacture of a flexible transparent electrode to replace the conventional brittle indium tin oxide (ITO) transparent electrode, along with flexible substrate planarization. We deposited a transparent oxide/metal/oxide (OMO) electrode on a polymer planarization layer and co-optimized both layers. The visible transmittance of the OMO electrode on a polyethylene terephthalate substrate increased markedly. Good electron supply and injection into an electron-transporting layer were achieved using WOX/Ag/ WOX and MoOx/Ag/MoOX OMO electrodes. High-performance flexible QLEDs were fabricated from these electrodes; a QLED with a MoOX/Ag/ MoOX cathode and an SU-8 planarization layer had a current efficiency of 30.3 cd/A and luminance more than 7 × 104 cd/m2. The current efficiency was significantly higher than that of a rigid QLED with an ITO cathode and was higher than current efficiency values obtained from previously reported QLEDs that utilized the same quantum-dot and electron-transporting layer materials as our study.

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Section: Introductionmentioning

confidence: 99%

Flexible CdSe/ZnS Quantum-Dot Light-Emitting Diodes with Higher Efficiency than Rigid Devices

Kim

Kwon

et al. 2022

Micromachines

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“…However, their intrinsically low electrical characteristics and unfavorable uniformity with oxide result in diminished optoelectronic properties of the device, deteriorating its capability to generate photocurrent and its response time [12][13][14][15][16][17]. Moreover, the ligand of QDs can impede carrier transport, and the narrow band gap materials are vulnerable to ambient air and moisture [18][19][20][21][22].…”

Section: Introductionmentioning

confidence: 99%

Low-Power Phototransistor with Enhanced Visible-Light Photoresponse and Electrical Performances Using an IGZO/IZO Heterostructure

Kim,

Jeong,

Park

et al. 2024

Materials

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In this study, we demonstrated the effective separation of charge carriers within the IGZO/IZO heterostructure by incorporating IZO. We have chosen IGZO for its high mobility and excellent on–off switching behavior in the front channel of our oxide–oxide heterostructure. Similarly, for an additional oxide layer, we have selected IZO due to its outstanding electrical properties. The optimized optoelectronic characteristics of the IGZO/IZO phototransistors were identified by adjusting the ratio of In:Zn in the IZO layer. As a result, the most remarkable traits were observed at the ratio of In:Zn = 8:2. Compared to the IGZO single-layer phototransistor, the IGZO/IZO(8:2) phototransistor showed improved photoresponse characteristics, with photosensitivity and photoresponsivity values of 1.00 × 107 and 89.1 AW−1, respectively, under visible light wavelength illumination. Moreover, the electrical characteristics of the IGZO/IZO(8:2) transistor, such as field effect mobility (μsat) and current on/off ratio (Ion/Ioff), were highly enhanced compared to the IGZO transistor. The μsat and Ion/Ioff were increased by about 2.1 times and 2.3 times, respectively, compared to the IGZO transistor. This work provides an approach for fabricating visible-light phototransistors with elevated optoelectronic properties and low power consumption based on an oxide–oxide heterostructure. The phototransistor with improved performance can be applied to applications such as color-selective visible-light image sensors and biometric sensors interacting with human–machine interfaces.

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