Organic Light‐Emitting Field‐Effect Transistors: Device Geometries and Fabrication Techniques

Abstract

Organic light-emitting transistors (OLETs), as novel and attractive kinds of organic electronic devices, have gained extensive attention from both academia and industry. The unique device architectures can simultaneously combine the electrical switching functionality of organic field-effect transistors and the light generation capability of organic light-emitting diodes in a single device, thereby holding great promise for reducing the complicated processes of next-generation pixel circuitry. This review involves the design, fabrication, and applications of OLETs with a comprehensive coverage of this field with the aim to give a deep insight into the intrinsic mechanisms of devices. Challenges and future prospects of OLETs are also discussed.

Low‐Threshold Non‐Doped Deep Blue Lasing from Monodisperse Truxene‐Cored Conjugated Starbursts with High Photostability

“…This study points out that subtle structural modulation of the arm length in the resulting conjugated starbursts plays as ignificant impact on the corresponding optoelectronic characteristics, which sheds light on rational design and optimization of the molecular architectures for organic semiconductor lasing. (1,2), Tr2 (3,4), Tr3 (5,6), Tr4 (7,8) films at different thicknesses:120 nm with L = 280 nm for l = 420 nm (1), 150 nm with L = 280 nm for l = 422 nm (2), 120 nm with L = 280 nm for l = 426 nm (3), 150 nm with L = 280 nm for l = 430 nm (4), 120 nm with L = 280 nm for l = 431 nm (5), 150 nm with L = 280 nm for l = 435 nm (6), 120 nm with L = 280 nm for l = 438 nm (7), 150 nm with L = 280 nm for l = 439 nm (8).…”

“…Organic p-conjugated semiconductors have gained much interest in optoelectronic applications such as organic fieldeffect transistors (OFETs), [1][2][3] organic light-emitting diodes (OLEDs), [4,5] organic photovoltaics (OPVs) [6,7] and organic semiconductor lasers, [8][9][10][11] since they have the advantages of lowcost, large-area processing, tunable optoelectronic characteristics, and good film-forminga bility.A lthough much progress has been obtained in OLEDs, most materials fail to satisfy the strict criteria for organic lasing. Particularly,i ts till faces the great challenge of developing novel molecules with highly luminescent efficiencies,efficient optical gain, high photostability and low lasing thresholds in order to achieve electrically pumped organic lasers.…”

Donor–Acceptor Type Pendant Conjugated Molecules Based on a Triazine Center with Depressed Intramolecular Charge Transfer Characteristics as Gain Media for Organic Semiconductor Lasers

“…Organic p-conjugated semiconductors have been intensely investigatedf or optoelectronics, such as organic light-emitting diodes (OLEDs), [1,2] organic field-effect transistors, [3,4] organic solar cells, [5] and organics emiconductor lasers (OSLs). [6,7] Despite recent advances in optically pumped organic lasing, [8][9][10][11] achieving electrically pumped organic lasing still remains ac ritical challenge.…”

Vertical-Type Organic Light-Emitting Transistors with High Effective Aperture Ratios

“…To overcome some of the limitations of (AM-)OLEDs, research on different structures and materials is currently yielding new developments [15][16][17][18][19][20][21][22][23][24][25][26][27][28][29][30]. Among these, organic light-emitting transistors (OLETs), such as static-inductiontransistor OLETs (SIT-OLETs) [17,18], metal-insulator-semiconductor OLETs (MIS-OLETs) [19], lateral-type OLETs [20][21][22][23][24][25][26][27][28][29], and vertical-type OLETs (VOLETs) [30], have been devised by integrating the capability of the OLED to generate EL light with the switching functionality of a field-effect transistor (FET) into a single device structure. In these OLETs, the current that flows through emissive semiconductor channel layers can be controlled by the gate voltage, which can also change the EL emission brightness state from the dark off-to the bright on-state.…”

“…In these OLETs, the current that flows through emissive semiconductor channel layers can be controlled by the gate voltage, which can also change the EL emission brightness state from the dark off-to the bright on-state. The on-state implies that holes and electrons injected into the channel layer form excitons that recombine radiatively to generate EL light [17][18][19][20][21][22][23][24][25][26][27][28][29][30]. These OLETs are of key interest; not only do they provide a novel device architecture to investigate fundamental optoelectronic properties related to charge carrier injection, transport, and radiative exciton recombination processes in organic semiconducting materials, at the same time OLETs can also be used to develop highly integrated organic optoelectronic devices such as highly bright and efficient light sources, optical communication systems, and electrically driven organic lasers [21][22][23][24][25][26][27][28][29][30].…”